公开(公告)号：AT234508T

公开(公告)日：2003-03-15

申请号：AT96105741

申请日：1996-04-11

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： ECKSTEIN ELKE ,  HOFFMAN BIRGIT ,  KIEWRA EDWARD W ,  KOCON WALDEMAR WALTER ,  WEISS MARK JAY

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/321 ,  H01L21/311

Abstract: A back end of the line dry etch method is disclosed. Etching of a mask oxide and temporary (sacrificial) silicon mandrel occurs following the formation of gate stacks and tungsten studs. The mask oxide is etched selectively to tungsten and silicon through the use of a polymerizing oxide etch. The silicon is etched selectively to both silicon nitride, silicon oxide, and tungsten. The process removes the silicon mandrel and associated silicon residual stringers by removing backside helium cooling, while using HBr as the single species etchant, and by adjusting the duration, the pressure, and the electrode gaps during the silicon etch process. The silicon may be undoped polysilicon, doped polysilicon, or single crystal silicon.

公开(公告)号：DE69626562D1

公开(公告)日：2003-04-17

申请号：DE69626562

申请日：1996-04-11

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： ECKSTEIN ELKE ,  HOFFMAN BIRGIT ,  KIEWRA EDWARD W ,  KOCON WALDEMAR WALTER ,  WEISS MARK JAY

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/321 ,  H01L21/311

Abstract: A back end of the line dry etch method is disclosed. Etching of a mask oxide and temporary (sacrificial) silicon mandrel occurs following the formation of gate stacks and tungsten studs. The mask oxide is etched selectively to tungsten and silicon through the use of a polymerizing oxide etch. The silicon is etched selectively to both silicon nitride, silicon oxide, and tungsten. The process removes the silicon mandrel and associated silicon residual stringers by removing backside helium cooling, while using HBr as the single species etchant, and by adjusting the duration, the pressure, and the electrode gaps during the silicon etch process. The silicon may be undoped polysilicon, doped polysilicon, or single crystal silicon.

公开(公告)号：DE69626562T2

公开(公告)日：2004-02-19

申请号：DE69626562

申请日：1996-04-11

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： ECKSTEIN ELKE ,  HOFFMAN BIRGIT ,  KIEWRA EDWARD W ,  KOCON WALDEMAR WALTER ,  WEISS MARK JAY

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/321 ,  H01L21/311

Abstract: A back end of the line dry etch method is disclosed. Etching of a mask oxide and temporary (sacrificial) silicon mandrel occurs following the formation of gate stacks and tungsten studs. The mask oxide is etched selectively to tungsten and silicon through the use of a polymerizing oxide etch. The silicon is etched selectively to both silicon nitride, silicon oxide, and tungsten. The process removes the silicon mandrel and associated silicon residual stringers by removing backside helium cooling, while using HBr as the single species etchant, and by adjusting the duration, the pressure, and the electrode gaps during the silicon etch process. The silicon may be undoped polysilicon, doped polysilicon, or single crystal silicon.