公开(公告)号：DE102005054431A1

公开(公告)日：2006-06-29

申请号：DE102005054431

申请日：2005-11-15

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： SETTLEMYER KENNETH ,  RAMACHANDRAN RAVIKUMAR ,  KIM MIN-SOO ,  KWON OH-JUNG

IPC: H01L21/8242 ,  H01L27/108

Abstract: A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.

公开(公告)号：DE102005063468B4

公开(公告)日：2009-05-20

申请号：DE102005063468

申请日：2005-11-15

Applicant: QIMONDA AG ,  IBM

Inventor： SETTLEMYER KENNETH ,  RAMACHANDRAN RAVIKUMAR ,  KIM MIN-SOO ,  KWON OH-JUNG

IPC: H01L21/8242 ,  H01L27/108

Abstract: A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.

公开(公告)号：DE102005054431B4

公开(公告)日：2008-08-28

申请号：DE102005054431

申请日：2005-11-15

Applicant: IBM ,  QIMONDA AG

Inventor： SETTLEMYER KENNETH ,  RAMACHANDRAN RAVIKUMAR ,  KIM MIN-SOO ,  KWON OH-JUNG

IPC: H01L21/8242 ,  H01L27/108

Abstract: A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.