公开(公告)号：WO03105195A2

公开(公告)日：2003-12-18

申请号：PCT/EP0305934

申请日：2003-06-05

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： SCHAFBAUER THOMAS ,  SPORTOUCH SANDRINE E

IPC: H01L21/265 ,  H01L21/266 ,  H01L21/00

CPC classification number: H01L21/2652 ,  H01L21/266

Abstract: A method of fabricating an integrated circuit in and on a semiconductor substrate with deep implantations by applying a scattered ion capturing layer in the resist mask opening tocapture any implanted ions scattered in the resist and deflected out of the resist into the mask opening to prevent these ions from reaching the semiconductor substrate and affecting the concentration of ions at the edge of the mask and thus the performance of the integrated circuit.

Abstract translation: 一种通过在抗蚀剂掩模开口中施加散射离子捕获层以捕获散射在抗蚀剂中的任何注入的离子并从抗蚀剂偏转到掩模开口中以防止这些离子的方法，在具有深度注入的半导体衬底中和之上制造集成电路的方法 从而到达半导体衬底并影响掩模边缘处的离子浓度，从而影响集成电路的性能。