公开(公告)号：CA2931252A1

公开(公告)日：2015-06-04

申请号：CA2931252

申请日：2014-11-25

Applicant: INPHENIX INC

Inventor： KAMAL MOHAMMAD ,  LI TONGNING ,  EU DAVID ,  QI QINIAN

IPC: G02B5/28 ,  B81B3/00

Abstract: A wavelength tunable gain medium with micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.

公开(公告)号：CA2917147A1

公开(公告)日：2015-01-08

申请号：CA2917147

申请日：2014-07-01

Applicant: INPHENIX INC

Inventor： MAKINO TOSHIHIKO ,  LI TONGNING ,  EU DAVID

IPC: H01S5/183 ,  H01S5/187 ,  H01S5/343

Abstract: A wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) with the use of micro-electromechanical system (MEMS) technology is provided as a swept source for Optical Coherence Tomography (OCT). The wavelength-tunable VCSEL comprises a bottom mirror of the VCSEL, an active region, and a MEMS tunable upper mirror movable by electrostatic deflections. The bottom mirror comprising a GaAs based distributed Bragg reflector (DBR) stack, and the active region comprising multiple stacks of GaAs based quantum dot (QD) layers, are epitaxially grown on a GaAs substrate. The MEMS tunable upper mirror includes a membrane part supported by suspension beams, and an upper mirror comprising a dielectric DBR stack. The MEMS tunable quantum dots VCSEL can cover an operating wavelength range of more than 100 nm, preferably with a center wavelength between 250 and 1950 nm, and the sweeping rate can be from a few kHz to hundreds of kHz, and up to a few MHz.

公开(公告)号：CA2917147C

公开(公告)日：2016-09-27

申请号：CA2917147

申请日：2014-07-01

Applicant: INPHENIX INC

Inventor： MAKINO TOSHIHIKO ,  LI TONGNING ,  EU DAVID

IPC: H01S5/183 ,  H01S5/187 ,  H01S5/343

Abstract: A wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) with the use of micro-electromechanical system (MEMS) technology is provided as a swept source for Optical Coherence Tomography (OCT). The wavelength-tunable VCSEL comprises a bottom mirror of the VCSEL, an active region, and a MEMS tunable upper mirror movable by electrostatic deflections. The bottom mirror comprising a GaAs based distributed Bragg reflector (DBR) stack, and the active region comprising multiple stacks of GaAs based quantum dot (QD) layers, are epitaxially grown on a GaAs substrate. The MEMS tunable upper mirror includes a membrane part supported by suspension beams, and an upper mirror comprising a dielectric DBR stack. The MEMS tunable quantum dots VCSEL can cover an operating wavelength range of more than 100 nm, preferably with a center wavelength between 250 and 1950 nm, and the sweeping rate can be from a few kHz to hundreds of kHz, and up to a few MHz.

公开(公告)号：EP3017515A4

公开(公告)日：2016-08-10

申请号：EP14819362

申请日：2014-07-01

Applicant: INPHENIX INC

Inventor： MAKINO TOSHIHIKO ,  LI TONGNING ,  EU DAVID

IPC: H01S5/183

CPC classification number: H01S5/18366 ,  G01B9/02004 ,  G01N21/4795 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/3412 ,  H01S5/34313

Abstract: A wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) with the use of microelectromechanical system (MEMS) technology is provided as a swept source for Optical Coherence Tomography (OCT). The wavelength-tunable VCSEL comprises a bottom mirror of the VCSEL, an active region, and a MEMS tunable upper mirror movable by electrostatic deflections. The bottom mirror comprising a GaAs based distributed Bragg reflector (DBR) stack, and the active region comprising multiple stacks of GaAs based quantum dot (QD) layers, are epitaxially grown on a GaAs substrate. The MEMS tunable upper mirror includes a membrane part supported by suspension beams, and an upper mirror comprising a dielectric DBR stack. The MEMS tunable quantum dots VCSEL can cover an operating wavelength range of more than 100 nm, preferably with a center wavelength between 250 and 1950 nm, and the sweeping rate can be from a few kHz to hundreds of kHz, and up to a few MHz.

公开(公告)号：EP3074800A4

公开(公告)日：2017-07-12

申请号：EP14866509

申请日：2014-11-25

Applicant: INPHENIX INC

Inventor： KAMAL MOHAMMAD ,  LI TONGNING ,  EU DAVID ,  QI QINIAN

IPC: H01S3/106 ,  G02B26/00

CPC classification number: G02B26/001 ,  B81C1/00317 ,  B81C2201/013 ,  G02B1/11 ,  G02B1/12 ,  H01L33/46 ,  H01L39/2467 ,  H01L2924/1461 ,  H01S3/08027 ,  H01S3/083 ,  H01S3/105 ,  H01S3/1062 ,  H01S5/141 ,  H01S5/18366

Abstract: A wavelength tunable gain medium with the use of micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.

Abstract translation: 使用基于微机电系统（MEMS）的法布里 - 珀罗（FP）滤波器腔调谐的波长可调增益介质被提供为可调谐激光器。 该系统包括激光腔和用于波长选择的滤波腔。 激光腔由增益介质组成，如半导体光放大器（SOA），两个准直透镜和一个端面反射器。 MEMS-FP滤波器腔包括固定反射器和可移动反射器，可通过静电力控制。 通过移动MEMS反射器，可以通过改变FP滤波器腔长来调整波长。 MEMS FP滤波器的腔体位移可以用阶跃电压离散调节，或者通过使用连续驱动电压连续调节。 用于连续调谐的驱动频率可以是MEMS结构的谐振频率或任何其它频率，并且调谐范围可以覆盖诸如30nm，40nm和大于100nm的不同调谐范围。