公开(公告)号：US20160111643A1

公开(公告)日：2016-04-21

申请号：US14886736

申请日：2015-10-19

Applicant: INSTITUTE FOR BASIC SCIENCE ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Han-Woong YEOM ,  Sung-Hwan KIM

IPC: H01L49/00

CPC classification number: H01L49/006 ,  B82Y10/00

Abstract: The disclosure describes a topological insulator having a new surface electronic state and a preparation method thereof, and more particularly, to a topological insulator having a new surface electronic state, the topological insulator including a unimolecular metal layer formed on a 3D topological insulator, and a method of preparing a topological insulator having a new surface electronic state, the method including: heating and cooling at least one selected from the group consisting of tellurium (Te) and selenium (Se), and bismuth (Bi) to prepare an alloy; and forming a unimolecular metal layer on the alloy.

Abstract translation: 本发明描述了具有新的表面电子状态的拓扑绝缘体及其制备方法，更具体地，涉及具有新的表面电子状态的拓扑绝缘体，所述拓扑绝缘体包括形成在3D拓扑绝缘体上的单分子金属层，以及 制备具有新的表面电子状态的拓扑绝缘体的方法，该方法包括：加热和冷却选自碲（Te）和硒（Se）和铋（Bi）中的至少一种以制备合金; 并在合金上形成单分子金属层。