公开(公告)号：US20220231144A1

公开(公告)日：2022-07-21

申请号：US17214042

申请日：2021-03-26

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Jun LUO ,  Tianchun YE ,  Dan ZHANG

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/40 ,  H01L29/06 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor structure, a method for manufacturing the semiconductor structure, and a transistor. A doped structure is provided, where the doped structure includes a dopant. A surface of the doped structure is oxidized to form the oxide film. In such case, the dopant at an interface between the oxide film and the doped structure may be redistributed, and thereby a segregated-dopant layer is formed inside or at a surface of the doped structure under the oxide film. A concentration of the dopant is higher in the segregated-dopant layer than in other regions of the doped structure. After the oxide film is removed, the doped structure with a high surface doping concentration can be obtained without an additional doping process. Therefore, after a conducting structure is formed on the segregated-dopant layer, a low contact resistance between the conducting structure and the doped structure is obtained, and a device performance is improved.