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公开(公告)号：US12198930B2
公开(公告)日：2025-01-14
申请号：US17630674
申请日：2021-11-12
Inventor： Libin Zhang , Yayi Wei , Zhen Song , Yajuan Su , Jianfang He , Le Ma
IPC: H01L29/40 , H01L21/027 , H01L21/311 , H01L21/768
Abstract: A method for manufacturing a semiconductor device. A photolithographic coating, including a first film, a photolithographic film, and a second film, is formed on the to-be-connected structure. Refractive indexes of the first film and the second film are smaller than 1, so that the photolithographic coating forms an optical structure with a high reflection coefficient. The photolithographic coating is exposed to a light having a target wavelength through a mask. The to-be-connected structure is reflected in the photolithographic coating, and hence serves as another mask and is imaged to the photolithographic film. A pattern of the mask is simultaneously imaged to the photolithographic film. That is, both the to-be-connected structure and the pattern of the mask are imaged to a target region of the photolithographic film, and the target region corresponds to the to-be-connected structure.
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公开(公告)号：US12222641B2
公开(公告)日：2025-02-11
申请号：US17773668
申请日：2021-11-08
Inventor： Jianfang He , Yayi Wei , Yajuan Su , Lisong Dong , Libin Zhang , Rui Chen , Le Ma
Abstract: The present disclosure provides a method for optimizing mask parameters, and the method includes: acquiring a test pattern, light source parameters, and initial mask parameters, the initial mask parameters including a mask thickness and an initial mask sidewall angle; generating multiple sets of candidate mask parameters according to the initial mask sidewall angle in the initial mask parameters; the multiple sets of candidate mask parameters including different mask sidewall angles and the same mask thickness; obtaining an imaging contrast of each set of candidate mask parameters based on the test pattern and the light source parameters; and selecting an optimal mask sidewall angle from the multiple sets of candidate mask parameters according to the imaging contrasts. By generating multiple sets of candidate mask parameters including different mask sidewall angles and the same mask thickness, and simulating these sets of candidate mask parameters respectively, the imaging contrast of each set of candidate mask parameters is obtained, so that the optimal mask sidewall angle is found according to the imaging contrasts. Therefore, by optimizing the mask parameters of the multi-layer film lens structure, the imaging contrast can also be significantly improved, and the imaging resolution can be improved.
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公开(公告)号：US20240077799A1
公开(公告)日：2024-03-07
申请号：US18262035
申请日：2021-11-02
Inventor： Le Ma , Yayi Wei , Libin Zhang , Jianfang He
Abstract: Provided is a method for correcting a lithography pattern of a surface plasma, including: forming a plurality of test patterns on a test mask; exposing a photoresist layer by using the test mask containing the test patterns to form a plurality of photoresist patterns; establishing a first data table based on a correspondence between the first test parameter and the second test parameter of the test pattern and the first exposure parameter and the second exposure parameter of the photoresist pattern; processing the first data table according to the first exposure parameter to obtain a second data table; and respectively correcting second test parameters of a plurality of design patterns according to the second data table to obtain corrected design patterns, and manufacturing a mask for exposure by using the corrected design patterns.
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公开(公告)号：US20240055254A1
公开(公告)日：2024-02-15
申请号：US17630674
申请日：2021-11-12
Inventor： Libin Zhang , Yayi Wei , Zhen Song , Yajuan Su , Jianfang He , Le Ma
IPC: H01L21/027 , H01L21/311 , H01L21/768
CPC classification number: H01L21/0274 , H01L21/31144 , H01L21/76897
Abstract: A method for manufacturing a semiconductor device. A photolithographic coating, including a first film, a photolithographic film, and a second film, is formed on the to-be-connected structure. Refractive indexes of the first film and the second film are smaller than 1, so that the photolithographic coating forms an optical structure with a high reflection coefficient. The photolithographic coating is exposed to a light having a target wavelength through a mask. The to-be-connected structure is reflected in the photolithographic coating, and hence serves as another mask and is imaged to the photolithographic film. A pattern of the mask is simultaneously imaged to the photolithographic film. That is, both the to-be-connected structure and the pattern of the mask are imaged to a target region of the photolithographic film, and the target region corresponds to the to-be-connected structure.
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