公开(公告)号：US20240176228A1

公开(公告)日：2024-05-30

申请号：US17773668

申请日：2021-11-08

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Jianfang HE ,  Yayi WEI ,  Yajuan SU ,  Lisong DONG ,  Libin ZHANG ,  Rui CHEN ,  Le MA

IPC: G03F1/44 ,  G03F1/70

CPC classification number: G03F1/44 ,  G03F1/70

Abstract: The present disclosure provides a method for optimizing mask parameters, and the method includes: acquiring a test pattern, light source parameters, and initial mask parameters, the initial mask parameters including a mask thickness and an initial mask sidewall angle; generating multiple sets of candidate mask parameters according to the initial mask sidewall angle in the initial mask parameters; the multiple sets of candidate mask parameters including different mask sidewall angles and the same mask thickness; obtaining an imaging contrast of each set of candidate mask parameters based on the test pattern and the light source parameters; and selecting an optimal mask sidewall angle from the multiple sets of candidate mask parameters according to the imaging contrasts. By generating multiple sets of candidate mask parameters including different mask sidewall angles and the same mask thickness, and simulating these sets of candidate mask parameters respectively, the imaging contrast of each set of candidate mask parameters is obtained, so that the optimal mask sidewall angle is found according to the imaging contrasts. Therefore, by optimizing the mask parameters of the multi-layer film lens structure, the imaging contrast can also be significantly improved, and the imaging resolution can be improved.