公开(公告)号：US10763105B2

公开(公告)日：2020-09-01

申请号：US16234303

申请日：2018-12-27

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xinyu Liu ,  Yidan Tang ,  Shengkai Wang ,  Yun Bai ,  Chengyue Yang

IPC: H01L21/02 ,  H01L29/78

Abstract: A method of manufacturing a grooved-gate MOSFET device based on a two-step microwave plasma oxidation, including: etching a grooved gate, and oxidizing silicon carbide on a surface of the grooved gate to silicon dioxide by microwave plasma to form a grooved-gate oxide layer, the step of forming the grooved-gate oxide layer including: placing a silicon carbide substrate subjected to the grooved gate etching in a microwave plasma generating device; introducing a first oxygen-containing gas, heating generated oxygen plasma to a first temperature at a first heating rate, and performing low-temperature plasma oxidation at the first temperature and a first pressure; heating the oxygen plasma to a second temperature at a second heating rate, introducing a second oxygen-containing gas, and performing high-temperature plasma oxidation at the second temperature and a second pressure until a predetermined thickness of silicon dioxide is formed; stopping introduction of the oxygen-containing gas, and completing the reaction.

公开(公告)号：US20190229182A1

公开(公告)日：2019-07-25

申请号：US15539478

申请日：2016-12-28

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Shengkai Wang ,  Honggang Liu ,  Bing Sun ,  Hudong Chang

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78

Abstract: The present disclosure relates to the field of semiconductor Integrated Circuit (IC) manufacture, and provides an InGaAs-based double-gate PMOS Field Effect Transistor (FET). The FET includes a bottom gate electrode, a bottom gate dielectric layer, a bottom gate interface control layer, an InGaAs channel layer, an upper interface control layer, a highly doped P-type GaAs layer, an ohmic contact layer, source/drain metal electrodes, a top gate dielectric layer and a top gate electrode. The source/drain metal electrodes are located on opposite sides of the ohmic contact layer. A gate trench structure is etched to an upper surface of the interface control layer between the source and drain metal electrodes. The top gate dielectric layer uniformly covers an inner surface of the gate trench structure, and the top gate electrode is provided on the top gate dielectric layer. The present disclosure provides a PMOS FET with better gate control functionality and a low interface density with the double-gate structure and interface control layer design, in order to meet the requirements of high-performance PMOS transistors.

公开(公告)号：US10750606B1

公开(公告)日：2020-08-18

申请号：US16447643

申请日：2019-06-20

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xinyu Liu ,  Shengkai Wang ,  Yidan Tang ,  Yun Bai

IPC: H05H1/46

Abstract: A microwave plasma equipment and a method of exciting plasma are disclosed. The microwave plasma equipment includes: a plasma reaction device having a cavity in which a base support and a plasma-forming area is provided; a conversion device having gradient electrodes, the gradient electrodes being disposed inside the cavity and configured to generate a gradient electric field in the plasma-forming area; a gas supply device configured to introduce gas into the cavity of the plasma reaction device; and a microwave generating device configured to generate and transmit microwave into the cavity of the plasma reaction device.

公开(公告)号：US10734199B2

公开(公告)日：2020-08-04

申请号：US16224435

申请日：2018-12-18

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xinyu Liu ,  Yidan Tang ,  Shengkai Wang ,  Yun Bai ,  Chengyue Yang

IPC: H01J37/32 ,  C23C8/10 ,  H01L21/02

Abstract: A microwave plasma generating device for plasma oxidation of SiC, comprising an outer cavity and a plurality of micro-hole/micro-nano-structured double-coupling resonant cavities disposed in the outer cavity. Each resonant cavity includes a cylindrical cavity. A micro-hole array formed by a plurality of micro-holes is uniformly distributed on a peripheral wall of the cylindrical cavity, a diameter of each of the micro-holes is an odd multiple of wavelength, and an inner wall of the cylindrical cavity has a metal micro-nano structure, the metal micro-nano structure has a periodic dimension of λ/n, where λ is wavelength of an incident wave, and n is refractive index of material of the resonant cavity. The outer cavity is provided with an gas inlet for conveying an oxygen-containing gas into the outer cavity, and the oxygen-containing gas forms an oxygen plasma around the resonant cavities for oxidizing SiC; a stage is disposed under the resonant cavities.

公开(公告)号：US10699898B2

公开(公告)日：2020-06-30

申请号：US16287902

申请日：2019-02-27

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xinyu Liu ,  Shengkai Wang ,  Yun Bai ,  Yidan Tang ,  Zhonglin Han ,  Xiaoli Tian ,  Hong Chen ,  Chengyue Yang

IPC: H01L21/02 ,  H01J37/32

Abstract: A method for oxidizing a silicon carbide based on microwave plasma at an AC voltage, including: step one, providing a silicon carbide substrate, and placing the silicon carbide substrate in a microwave plasma generating device; step two, introducing oxygen-containing gas to generate oxygen plasma at an AC voltage; step three, controlling movements of oxygen ions and electrons in the oxygen plasma by the AC voltage to generate an oxide layer having a predetermined thickness on the silicon carbide substrate, wherein when a voltage of the silicon carbide substrate is negative, the oxygen ions move close to an interface and perform an oxidation reaction with the silicon carbide, and when the voltage of the silicon carbide substrate is positive, the electrons move close to the interface and perform a reduction reaction with the silicon carbide, removing carbon residue; step four, stopping the introduction of oxygen-containing gas and the reaction completely.