公开(公告)号：US20230337548A1

公开(公告)日：2023-10-19

申请号：US18042249

申请日：2020-08-20

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong XING ,  Huai LIN ,  Yu LIU ,  Peiwen ZHANG ,  Changqing XIE ,  Ling LI ,  Ming LIU

IPC: H10N50/20 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85 ,  G06F7/501

CPC classification number: H10N50/20 ,  G11C11/161 ,  H10B61/10 ,  H10N50/85 ,  G06F7/501 ,  G11C11/1673 ,  G11C11/1675

Abstract: An SOT-driven field-free switching MRAM and an array thereof. From top to bottom, the SOT-MRAM sequentially includes: a selector (1) configured to turn on or turn off the SOT-MRAM under an action of an external voltage; a magnetic tunnel junction (2), including a ferromagnetic reference layer, a tunneling layer and a ferromagnetic free layer arranged sequentially from top to bottom; and a spin-orbit coupling layer (3) made of one or more selected from heavy metal, doped heavy metal, heavy metal alloy, metal oxide, dual heavy metal layers, semiconductor material, two-dimensional semi-metal material and anti-ferromagnetic material. The spin-orbit coupling layer is configured to generate an in-plane effective field in the ferromagnetic free layer by using the interlayer exchange coupling effect and generate spin-orbit torques by using the spin Hall effect, so as to perform a deterministic data storage in the magnetic tunnel junction (2).