公开(公告)号：US10060016B2

公开(公告)日：2018-08-28

申请号：US15003259

申请日：2016-01-21

Applicant: INTEGRAN TECHNOLOGIES INC.

Inventor： Gino Palumbo ,  Iain Brooks ,  Klaus Tomantschger ,  Peter Lin ,  Karl Aust ,  Nandakumar Nagarajan ,  Francisco Gonzalez

IPC: C25D3/38 ,  C22F1/08 ,  C25D5/50 ,  C21D1/06 ,  C21D9/00 ,  C25D3/12

CPC classification number: C22F1/08 ,  C21D1/06 ,  C21D9/0068 ,  C25D3/12 ,  C25D3/38 ,  C25D5/50

Abstract: Polycrystalline materials are prepared by electrodeposition of a precursor material that is subsequently heat-treated to induce at least a threefold increase in the grain size of the material to yield a relatively high fraction of ‘special’ low Σ grain boundaries and a randomized crystallographic texture. The precursor metallic material has sufficient purity and a fine-grained microstructure (e.g., an average grain size of 4 nm to 5 μm). The resulting metallic material is suited to the fabrication of articles requiring high mechanical or physical isotropy and/or resistance to grain boundary-mediated deformation or degradation mechanisms.