公开(公告)号：AT487810T

公开(公告)日：2010-11-15

申请号：AT03768404

申请日：2003-12-19

Applicant: INTEGRATED OPTOELECTRONICS AS

Inventor： BUGGE RENATO ,  FIMLAND BJOERN-OVE

IPC: C23F1/16 ,  C23F1/30 ,  H01L21/306 ,  H01L21/311 ,  H01L21/465 ,  H01P11/00 ,  H01S5/323

Abstract: The present invention relates to a wet acid etchant for wet acid etching of intrinsic, n-doped or p-doped Al1-x-zGaxInzAs1-ySby with 0

公开(公告)号：DE60334929D1

公开(公告)日：2010-12-23

申请号：DE60334929

申请日：2003-12-19

Applicant: INTEGRATED OPTOELECTRONICS AS

Inventor： BUGGE RENATO ,  FIMLAND BJOERN-OVE

IPC: C23F1/16 ,  C23F1/30 ,  H01L21/306 ,  H01L21/311 ,  H01L21/465 ,  H01P11/00 ,  H01S5/323