公开(公告)号：WO2011037742A2

公开(公告)日：2011-03-31

申请号：PCT/US2010047987

申请日：2010-09-07

Applicant: INTEL CORP ,  HECK JOHN ,  LIU ANSHENG ,  MORSE MICHAEL T ,  RONG HAISHENG

Inventor： HECK JOHN ,  LIU ANSHENG ,  MORSE MICHAEL T ,  RONG HAISHENG

IPC: G02B6/122 ,  G02B6/13

CPC classification number: H01L31/02327 ,  G02B6/4214

Abstract: A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets. These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.

Abstract translation: 垂直全内反射（TIR）反射镜及其制造是通过使用晶体硅蚀刻产生凹入轮廓而制成的。 从SOI晶片开始，使用深硅蚀刻来暴露掩埋氧化物层，然后对其进行湿蚀刻（在HF中），从而打开Si器件层的底表面。 然后暴露该底部硅表面，以便在晶体蚀刻中，所得到的形状是具有小平面的凹入梯形。 根据TIR原理，这些刻面可以与平面硅波导结合使用，以向上反射光线。 或者，可以从晶圆上方将光耦合到硅波导中以用于晶圆级测试等目的。

公开(公告)号：DE60310068T2

公开(公告)日：2007-07-05

申请号：DE60310068

申请日：2003-05-15

Applicant: INTEL CORP

Inventor： LIU ANSHENG

IPC: H01S5/0625 ,  H01S5/125 ,  H01S5/06 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  H01S5/50

Abstract: Embodiments of a method and apparatus for tunable wavelength conversion using a Bragg grating and a gain medium disposed in a semiconductor substrate are disclosed herein. In one embodiment, an input optical signal corresponding to a first wavelength and modulated with a data component may be directed into the gain medium (e.g., a quantum cascade intersubband laser) to cause emission of light of at least one wavelength distinct from the first wavelength and modulated with the data component of the input optical signal. At least a portion of the emitted light may then be reflected from the tunable Bragg grating to cause stimulated emission of the selected Bragg wavelength, thereby generating an output optical signal corresponding to a wavelength distinct from the first wavelength, and modulated with the data component of the input optical signal.

公开(公告)号：WO2010033435A3

公开(公告)日：2010-06-17

申请号：PCT/US2009056727

申请日：2009-09-11

Applicant: INTEL CORP ,  LIU ANSHENG

Inventor： LIU ANSHENG

IPC: G02B6/12 ,  G02B6/38

CPC classification number: G02B6/305 ,  B82Y20/00 ,  G02B6/1223 ,  G02B2006/12061

Abstract: A method and apparatus for efficient coupling between a silicon photonic chip and an optical fiber is described. In one embodiment, an apparatus according to embodiments of the present invention includes: a first optical waveguide having a first end to optically couple to a first external device and a second end, the second end having a taper with a tip at the second end, a second optical waveguide optically coupled to the taper of the first optical waveguide, having a taper with a tip at a second end, and a third optical waveguide optically coupled to the taper of the second optical waveguide, the third optical waveguide to optically couple to a second external device having a larger cross-sectional area than the first external device.

Abstract translation: 描述了用于硅光子芯片和光纤之间的有效耦合的方法和设备。 在一个实施例中，根据本发明的实施例的装置包括：第一光波导，其具有第一端以光学耦合到第一外部装置和第二端，所述第二端具有在第二端具有尖端的锥形， 第二光学波导，其光学耦合到第一光学波导的锥形，具有在第二端处具有尖端的锥形，以及第三光学波导，其光学地耦合到第二光学波导的锥形，第三光学波导与第一光学波导光耦合 具有比第一外部装置更大的横截面积的第二外部装置。

公开(公告)号：WO2010039594A2

公开(公告)日：2010-04-08

申请号：PCT/US2009058315

申请日：2009-09-25

Applicant: INTEL CORP ,  SHETRIT YOEL ,  LIAO LING ,  LIU ANSHENG

Inventor： SHETRIT YOEL ,  LIAO LING ,  LIU ANSHENG

IPC: G02B6/12 ,  G02B6/26

CPC classification number: G02B6/12004 ,  G02B2006/12142 ,  G02F1/025 ,  G02F1/225 ,  G02F1/2257

Abstract: A method and apparatus for high speed silicon optical modulation is described using a PN diode. In one example, an optical waveguide has adjoining first and second doped semiconductor regions. The first and second regions have opposite doping types and the first doped region extends in two perpendicular directions through the waveguide.

Abstract translation: 使用PN二极管来描述用于高速硅光学调制的方法和设备。 在一个示例中，光波导具有邻接的第一和第二掺杂半导体区域。 第一和第二区域具有相反的掺杂类型，并且第一掺杂区域在两个垂直方向上延伸通过波导。

公开(公告)号：WO2008005721A2

公开(公告)日：2008-01-10

申请号：PCT/US2007071952

申请日：2007-06-22

Applicant: INTEL CORP ,  LIU ANSHENG ,  PANICCIA MARIO J ,  JONES RICHARD

Inventor： LIU ANSHENG ,  PANICCIA MARIO J ,  JONES RICHARD

CPC classification number: G02B6/12019 ,  G02B6/12004 ,  G02F1/2257 ,  H01S5/021 ,  H01S5/02248 ,  H01S5/1032 ,  H01S5/141 ,  H01S5/4087

Abstract: An apparatus and method providing a plurality of modulated optical beams from a single layer of semiconductor material. For one example, an apparatus includes a plurality of optical waveguides disposed in a single layer of semiconductor material. Each one of the plurality of optical waveguides includes an optical cavity defined along the optical waveguide. A single bar of gain medium material adjoining the single layer of semiconductor material across the plurality of optical waveguides is included. The gain medium-semiconductor material interface is defined along each of the plurality of optical waveguides. A plurality of optical modulators is disposed in the single layer of semiconductor material. Each one of the plurality of optical modulators is optically coupled to a respective one of the plurality of optical waveguides to modulate a respective optical beam directed from the optical cavity.

Abstract translation: 一种从单层半导体材料提供多个调制光束的装置和方法。 作为一个示例，设备包括设置在单层半导体材料中的多个光波导。 多个光波导中的每一个包括沿着光波导限定的光学腔。 包括与多个光波导相邻的单层半导体材料的单条增益介质材料。 沿着多个光波导中的每一个限定增益介质半导体材料界面。 多个光学调制器设置在单层半导体材料中。 多个光学调制器中的每一个光学耦合到多个光波导中的相应的一个光波导，以调制从光腔指向的相应光束。

公开(公告)号：WO2006028621A9

公开(公告)日：2006-07-13

申请号：PCT/US2005027631

申请日：2005-08-04

Applicant: INTEL CORP ,  LIU ANSHENG ,  PANICCIA MARIO ,  RONG HAISHENG

Inventor： LIU ANSHENG ,  PANICCIA MARIO ,  RONG HAISHENG

IPC: H01S3/30 ,  G02B6/12 ,  G02B6/122 ,  G02B6/26 ,  H01S3/063

CPC classification number: G02B6/122 ,  G02B2006/12097 ,  H01S3/063 ,  H01S3/083 ,  H01S3/0941 ,  H01S3/30

Abstract: A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.

Abstract translation: 具有减少的双光子吸收的基于半导体的拉曼激光器和/或放大器产生载流子寿命。 根据本发明实施例的设备包括设置在半导体材料中的光波导和设置在光波导中的二极管结构。 光波导将被耦合到泵浦激光器以接收具有第一波长和第一功率水平的第一光束，以导致在半导体波导中发射第二波长的第二光束。 二极管结构将被偏置以从响应光波导中的双光子吸收而产生的光波导中扫出自由载流子。

公开(公告)号：WO2012009149A3

公开(公告)日：2012-04-05

申请号：PCT/US2011041978

申请日：2011-06-27

Applicant: INTEL CORP ,  HECK JOHN ,  LIU ANSHENG ,  PANICCIA MARIO J

Inventor： HECK JOHN ,  LIU ANSHENG ,  PANICCIA MARIO J

IPC: G02B6/12

CPC classification number: G02B6/4214 ,  G02B6/422

Abstract: Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.

Abstract translation: 用于提供集成电路管芯组件的反射目标区域的技术和架构。 在一个实施例中，管芯的反射斜面允许从模组件的侧表面的方向接收光信号以反射到光电探测器中。 在另一个实施例中，管芯耦合表面中的一个或多个凹槽提供相应的杠杆作用点，以将斜面表面的目标区域与光电探测器的探测表面对准。

公开(公告)号：WO2006063348A9

公开(公告)日：2006-08-03

申请号：PCT/US2005044928

申请日：2005-12-09

Applicant: INTEL CORP ,  LIU ANSHENG ,  PANICCIA MARIO ,  RONG HAISHENG

Inventor： LIU ANSHENG ,  PANICCIA MARIO ,  RONG HAISHENG

IPC: H04B10/155

CPC classification number: H04B10/505 ,  G02F1/2257 ,  G02F1/3515 ,  G02F1/3526

Abstract: A fast optical modulator or switch with reduced optical loss is disclosed. An apparatus according to aspects of the present invention includes an optical splitter disposed in a semiconductor material. An optical beam having a first wavelength is split by the optical splitter into first and second portions. First and second optical waveguides disposed in the semiconductor material are optically coupled to the optical splitter. The first and second portions of the optical beam are to be directed through the first and second optical waveguides, respectively. The first optical waveguide is also optically coupled to receive a pump optical beam. The pump optical beam has a pump wavelength and a pump power level to amplify and phase shift the first portion of the optical beam of the first wavelength in the first optical waveguide. A diode structure is disposed in the first optical waveguide and is selectively biased to sweep out free carriers from the first optical waveguide generated in response to two photon absorption in the optical waveguide. An optical coupler is disposed in the semiconductor material and is optically coupled to the first and second optical waveguides to combine the first and second portions of the optical beam.

Abstract translation: 公开了一种具有光损耗降低的快速光调制器或开关。 根据本发明的方面的装置包括设置在半导体材料中的光分路器。 具有第一波长的光束被光分路器分成第一和第二部分。 设置在半导体材料中的第一和第二光波导光学耦合到光分路器。 光束的第一和第二部分分别被引导通过第一和第二光波导。 第一光波导也被光学耦合以接收泵浦光束。 泵浦光束具有泵浦波长和泵浦功率电平，以在第一光波导中放大并移相第一波长的光束的第一部分。 二极管结构设置在第一光波导中，并且被选择性地偏置以从响应于光波导中的两个光子吸收而产生的第一光波导扫出自由载流子。 光耦合器设置在半导体材料中并且光耦合到第一和第二光波导以组合光束的第一和第二部分。

公开(公告)号：WO2011081845A3

公开(公告)日：2011-11-17

申请号：PCT/US2010059852

申请日：2010-12-10

Applicant: INTEL CORP ,  LIU ANSHENG

Inventor： LIU ANSHENG

IPC: G02B6/12 ,  G02B6/42

CPC classification number: H01L31/0232 ,  G02B6/02023 ,  G02B6/4214 ,  G02B6/4215 ,  H01L31/1808

Abstract: An integrated optical receiver architecture may be used to couple light between a multi-mode fiber (MMF) and silicon chip which includes integration of a silicon de-multiplexer and a high-speed Ge photo-detector. The proposed architecture may be used for both parallel and wavelength division multiplexing (WDM) based optical links with a data rate of 25 Gb/s and beyond.

Abstract translation: 集成光学接收器架构可以用于在多模光纤（MMF）和硅芯片之间耦合光，其中包括硅解复用器和高速锗光电探测器的集成。 所提出的架构可用于基于并行和波分复用（WDM）的光链路，数据速率为25Gb / s及以上。

公开(公告)号：WO2007002953A2

公开(公告)日：2007-01-04

申请号：PCT/US2006026214

申请日：2006-06-28

Applicant: INTEL CORP ,  MORSE MICHAEL ,  DOSUNMU OLUFEMI ,  PANICCIA MARIO ,  LIU ANSHENG

Inventor： MORSE MICHAEL ,  DOSUNMU OLUFEMI ,  PANICCIA MARIO ,  LIU ANSHENG

CPC classification number: H01L31/1075 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812 ,  Y02E10/547

Abstract: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

Abstract translation: 公开了一种基于半导体波导的光接收器。 根据本发明的方面的装置包括吸收区域，该吸收区域包括靠近第二类型半导体区域的第一类型半导体区域。 第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收第二波长范围内的光。 乘法区域被定义为靠近吸收区域并与之分离。 倍增区域包括其中存在电场以使在吸收区域中产生的电子倍增的本征半导体区域。