公开(公告)号：WO2005034344A1

公开(公告)日：2005-04-14

申请号：PCT/US2004/032062

申请日：2004-09-29

Applicant: INTEL CORPORATION

Inventor： DOROS, Theodore ,  SESHAN, Krishna ,  IYER, Subramani

IPC: H03H3/04

CPC classification number: B81B3/0072 ,  B81C2201/0109

Abstract: Embodiments of the present invention form a weight­compensating/ tuning layer on a structure ( e.g., a silicon wafer with one or more layers of material ( e.g., films)) having variations in its surface topology. The variations in surface topology take the form of thick and thin regions of materials. The weight-compensating/ tuning layer includes narrow and wide regions corresponding to the thick and thin regions, respectively.

Abstract translation: 本发明的实施例在其表面拓扑结构具有变化的结构（例如，具有一层或多层材料（例如膜）的硅晶片）上形成重量补偿/调谐层。 表面拓扑的变化采取厚薄的材料区域的形式。 重量补偿/调谐层分别包括对应于厚和薄区域的窄且宽的区域。