公开(公告)号：US12185646B2

公开(公告)日：2024-12-31

申请号：US18082189

申请日：2022-12-15

Applicant: International Business Machines Corporation

Inventor： Ning Li ,  Wanki Kim ,  Devendra K. Sadana

IPC: H10N70/00

Abstract: A phase change memory (PCM) structure configured for performing a gradual reset operation includes first and second electrodes and a phase change material layer disposed between the first and second electrodes. The PCM structure further includes a thermal insulation layer disposed on at least sidewalls of the first and second electrodes and phase change material layer. The thermal insulation layer is configured to provide non-uniform heating of the phase change material layer. Optionally, the thermal insulation layer may be formed as an air gap. The PCM structure may be configured having the first and second electrodes aligned in a vertical or a lateral arrangement.

公开(公告)号：US12148833B2

公开(公告)日：2024-11-19

申请号：US18473482

申请日：2023-09-25

Applicant: International Business Machines Corporation

Inventor： Sung Dae Suk ,  Somnath Ghosh ,  Chen Zhang ,  Junli Wang ,  Devendra K. Sadana ,  Dechao Guo

IPC: H01L29/78 ,  H01L25/07 ,  H01L29/08

Abstract: A semiconductor device fabrication method is provided. The semiconductor device fabrication method includes frontside semiconductor device processing on a frontside of a wafer, flipping the wafer, backside semiconductor device processing on a backside of the wafer and backside and frontside contact formation processing on the backside and frontside of the wafer, respectively.

公开(公告)号：US12068477B2

公开(公告)日：2024-08-20

申请号：US16679369

申请日：2019-11-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Devendra K. Sadana ,  Stephen W. Bedell ,  Joel P. de Souza ,  John Collins

IPC: H01M4/38 ,  H01M4/04 ,  H01M4/1395 ,  H01M4/36 ,  H01M4/80

CPC classification number: H01M4/386 ,  H01M4/0402 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/80

Abstract: A method of forming a solid-state lithium ion rechargeable battery may include depositing a metal layer onto a top surface of a substrate, depositing a handle layer onto a top surface of the metal layer, wherein a portion of the handle layer overlaps the metal layer and the substrate, spalling a portion of the substrate thereby forming a spalled substrate layer, porosifying the spalled substrate layer thereby forming a porous substrate layer, depositing an electrolyte layer onto a top surface of the porous substrate layer, wherein the electrolyte layer is in direct contact with the porous substrate layer, and depositing a cathode onto a top surface of the electrolyte layer. The method may include depositing a cathode contact layer onto a top surface of the cathode, wherein the cathode contact layer is in direct contact with the cathode. The porous substrate layer may be made of silicon.

公开(公告)号：US11864906B2

公开(公告)日：2024-01-09

申请号：US16447324

申请日：2019-06-20

Applicant: International Business Machines Corporation

Inventor： Steven J. Holmes ,  Devendra K. Sadana ,  Stephen W. Bedell

IPC: A61B5/00

CPC classification number: A61B5/4064 ,  A61B5/0031 ,  A61B5/0084 ,  A61B5/742 ,  A61B2562/0233 ,  A61B2562/046

Abstract: A method includes implanting an implantable biosensor within a subject where the implantable biosensor has an array of light sources and an array of light detectors, activating the array of light sources to direct light signals at a targeted tissue site in the subject, capturing, with the light detectors, the light signals reflected off the targeted site, calculating a roundtrip propagation time for each of the light signals and comparing the roundtrip propagation time for each of the light signals against previous calculated respective roundtrip propagation times to determine an occurrence of a change in the targeted tissue site.

公开(公告)号：US20230363694A1

公开(公告)日：2023-11-16

申请号：US18359363

申请日：2023-07-26

Applicant: International Business Machines Corporation

Inventor： Steven J. Holmes ,  Devendra K. Sadana ,  Stephen W. Bedell

IPC: A61B5/00

CPC classification number: A61B5/4064 ,  A61B5/0031 ,  A61B5/742 ,  A61B5/0084 ,  A61B2562/046 ,  A61B2562/0233

Abstract: A method includes implanting an implantable biosensor within a subject where the implantable biosensor has an array of light sources and an array of light detectors, activating the array of light sources to direct light signals at a targeted tissue site in the subject, capturing, with the light detectors, the light signals reflected off the targeted site, calculating a roundtrip propagation time for each of the light signals and comparing the roundtrip propagation time for each of the light signals against previous calculated respective roundtrip propagation times to determine an occurrence of a change in the targeted tissue site.

公开(公告)号：US11817501B2

公开(公告)日：2023-11-14

申请号：US17481647

申请日：2021-09-22

Applicant: International Business Machines Corporation

Inventor： Sung Dae Suk ,  Somnath Ghosh ,  Chen Zhang ,  Junli Wang ,  Devendra K. Sadana ,  Dechao Guo

IPC: H01L29/78 ,  H01L25/07 ,  H01L29/08

CPC classification number: H01L29/785 ,  H01L25/074 ,  H01L29/0847 ,  H01L29/7827

Abstract: A semiconductor device fabrication method is provided. The semiconductor device fabrication method includes frontside semiconductor device processing on a frontside of a wafer, flipping the wafer, backside semiconductor device processing on a backside of the wafer and backside and frontside contact formation processing on the backside and frontside of the wafer, respectively.

公开(公告)号：US11805711B2

公开(公告)日：2023-10-31

申请号：US17034057

申请日：2020-09-28

Applicant: International Business Machines Corporation

Inventor： Ning Li ,  Joel P. de Souza ,  Kevin W. Brew ,  Devendra K. Sadana

IPC: H10N70/20 ,  H10B63/00 ,  H10N70/00

CPC classification number: H10N70/231 ,  H10B63/00 ,  H10N70/021 ,  H10N70/063 ,  H10N70/841 ,  H10N70/8833

Abstract: A Phase-Change Memory (PCM) device includes a dielectric layer, a bottom electrode disposed in the dielectric layer, a liner material disposed on the bottom electrode, a phase-change material disposed on the liner material, and a top electrode disposed on the phase-change material and in the dielectric layer.

公开(公告)号：US11742632B2

公开(公告)日：2023-08-29

申请号：US16522873

申请日：2019-07-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeehwan Kim ,  Ning Li ,  Devendra K. Sadana ,  Brent A. Wacaser

IPC: H01S5/10 ,  H01S3/0933 ,  H01S5/04 ,  H01S5/30 ,  H01S5/11 ,  H01S5/026 ,  H01L33/58

CPC classification number: H01S5/1042 ,  H01S3/0933 ,  H01S5/041 ,  H01S5/1067 ,  H01S5/11 ,  H01S5/30 ,  H01L33/58 ,  H01L2933/0058 ,  H01L2933/0083 ,  H01S5/026

Abstract: A laser structure including a Si or Ge substrate, a III-V buffer layer formed on the substrate, a light emitting diode (LED) formed on the buffer layer configured to produce visible light, a lens disposed on the LED to focus light from the LED, a photonic crystal layer formed on the LED to receive the light focused by the lens, and a monolayer semiconductor nanocavity laser formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED. The LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.

公开(公告)号：US20230255123A1

公开(公告)日：2023-08-10

申请号：US18192524

申请日：2023-03-29

Applicant: International Business Machines Corporation

Inventor： Steven J. Holmes ,  Devendra K. Sadana ,  David C. Mckay ,  Jared Barney Hertzberg ,  Stephen W. Bedell ,  Ning Li

IPC: H10N60/80 ,  G06N10/00 ,  H01L29/66 ,  H10N60/12

CPC classification number: H10N60/805 ,  G06N10/00 ,  H01L29/66977 ,  H10N60/12 ,  G01R33/0358

Abstract: Systems and techniques that facilitate quantum tuning via permanent magnetic flux elements are provided. In various embodiments, a system can comprise a qubit device. In various aspects, the system can further comprise a permanent magnet having a first magnetic flux, wherein an operational frequency of the qubit device is based on the first magnetic flux. In various instances, the system can further comprise an electromagnet having a second magnetic flux that tunes the first magnetic flux. In various cases, the permanent magnet can comprise a nanoparticle magnet. In various embodiments, the nanoparticle magnet can comprise manganese nanoparticles embedded in a silicon matrix. In various aspects, the system can further comprise an electrode that applies an electric current to the nanoparticle magnet in a presence of the second magnetic flux, thereby changing a strength of the first magnetic flux.

公开(公告)号：US20230147329A1

公开(公告)日：2023-05-11

申请号：US17521083

申请日：2021-11-08

Applicant: International Business Machines Corporation

Inventor： Sung Dae Suk ,  Devendra K. Sadana ,  Tze-Chiang Chen

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L29/41791 ,  H01L29/66795 ,  H01L2029/7858

Abstract: Double gate/gate-all-around and variable threshold voltage MOSFET devices and techniques for fabrication thereof in a single backside process are provided. In one aspect, a MOSFET device includes: a channel in between source/drain regions; at least one first gate disposed on a first side of the channel at a frontside of the MOSFET device; gate spacers offsetting the source/drain regions from the at least one first gate; and at least one second gate disposed on a second side of the channel directly opposite the at least one first gate at a backside of the MOSFET device. At least one gate contact can be present in direct contact with the at least one first gate and the at least one second gate. A method of forming a MOSFET device is also provided.