Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus and methods that manufacture patterned layers on a substrate using a detachable mask. SOLUTION: Unlike prior art where the mask is formed directly over the substrate, the mask 110 is formed independently of the substrate 105. During use, the mask 110 is positioned in close proximity or in contact with the substrate 105 so as to expose only portions of the substrate 105 to processing, e.g., deposition, sputtering or etch. Once the processing is completed, the mask 110 is moved away from the substrate 105 and may be discarded or used for another substrate 105. The mask 110 may be cycled for a given number of substrates 105 and then be removed for cleaning or disposal. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an electrostatic chuck having surface embossments pattern for effectively balancing a uniform distribution of a backside gas, and gas-phase heat transfer and solid contact heat transfer. SOLUTION: The electrostatic chuck includes an angled conduit, or an angled laser drilled passage, through which a heat transfer gas is provided. A segment of the angled conduit and/or the angled laser drilled passage extends along an axis different from an axis of the electric field generated to hold a substrate to the chuck, thereby minimizing plasma arcing and backside gas ionization. A first plug may be inserted into the conduit, wherein a segment of a first exterior channel thereof extends along an axis different from an axis of the electric field. A first and a second plug may be inserted into a ceramic sleeve which extends through at least one of the dielectric member and the electrode. Finally, the surface of the dielectric member may comprise embossments arranged at radial distances from the center of the dielectric member so as to improve heat transfer and gas distribution. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a device and a method for conveying and processing substrates inclusive of wafers adapted to allow efficient production at a reasonable cost and also having an improved throughput, as compared to systems in use today. SOLUTION: A key constituent feature is use of a conveying chamber, which feeds substrates into a controlled atmosphere along the sides of processing chambers through a load lock and then along a conveying chamber that performs as a means for carrying the substrates to reach the processing chambers, and subsequently to processing within the processing chambers, releases the substrates to the exterior of the controlled atmosphere. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a system for etching a patterned media disk.SOLUTION: A movable non-contact electrode is utilized to perform sputter etch. The electrode moves to be nearly but not in contact with the substrate, so as to couple RF energy to a disk 350. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier 320 and both sides are etched serially. That is, one side is etched in one chamber, and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier 320 moves the disk between the chambers. The carrier 320 may be a linear drive carrier, using, e.g., magnetized wheels and linear motors 326.
Abstract:
PROBLEM TO BE SOLVED: To provide a system with a small foot print which has many stations and processing substrates such as magnetic disks. SOLUTION: Disk processing and a manufacturing device are described. A processing chamber is laminated on a station and disks move on a disk carrier through a system, wherein the disk carrier is adjustable to take various sizes of disks. The disks enter the system through a loading zone and are then mounted in the disk carriers. The disks are in the carrier and continuously move at a certain level through the processing chambers and then move to another level by a lift or elevator. At another level, the disks continuously move again through the system and are then output at an unloading zone. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an electrostatic chuck assembly capable of reducing formation of plasma in the inside of an electrostatic chuck or its circumference, for example, in an opening penetrating the electrostatic chuck assembly, and a duct or its circumference while supplying a sufficient quantity of heat exchange gas to a substrate. SOLUTION: An isolator for a heat exchange gas conduit of this electrostatic chuck is disclosed. The isolator 300 includes a sleeve 304 and a body 308 arranged in the sleeve 304 for forming an annulus 312 for running the heat exchange gas between the sleeve 304 and itself. The body 308 is arranged in contact with a dielectric pack 111 of the electrostatic chuck, and may be supported in this position by a spring 328. A silicon seal 334 may be provided between the sleeve 304 and the pack 111 to prevent plasma from being formed in the conduit. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus and a method for carrying and processing substrates including wafers in a small footprint. SOLUTION: A linear carrying chamber 1232 includes a linear track, a robot arm 1243 or the like mounted on the linear track, and carries substrates linearly along the side of a process chamber 1201 or the like. Also, it allows the substrates to reach the process chamber 1201 or the like through a load lock 1235 and supplies the substrates into a controlled atmosphere along the carrying chamber 1232. Consequently, manufacture can be efficiently performed at a reasonable cost and with improved throughput. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate processing chamber for processing substrates such as semiconductor wafers, flat panel substrates, solar panels, etc., including mechanism for in-situ plasma cleaning. SOLUTION: The chamber body has at least one plasma source opening provided on its sidewall. A movable substrate holder is situated within the chamber body, the substrate holder is situated at a first position wherein the substrate is positioned below the plasma source opening for in-situ plasma cleaning of the chamber, and a second position wherein the substrate is positioned above the plasma source opening for substrate processing. A plasma energy source is coupled to the plasma source opening. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus and method, in which cost and throughput are improved by maintaining a small installation area and controlling each staying time in an individual processing station. SOLUTION: A linear transport chamber includes linear tracks and robot arms riding on the linear tracks to linearly transfer substrates along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers. A four-axis robot arm is disclosed, capable of linear translation, rotation and articulation, and z-motion. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a system and method for safely and optimally dechucking a wafer from an electrostatic chuck surface. SOLUTION: The current of a motor 208 used in a lift pin mechanism 210 is monitored by a controller 204, and a dechuck voltage is determined based on the value of the current. The determined dechuck voltage is applied to an electrode of an electrostatic chuck 216 from a voltage source 212 to dechuck a wafer. COPYRIGHT: (C)2010,JPO&INPIT