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1.Method of forming insulating region on semiconductor substrate 失效
Title translation: 在半导体基板上形成绝缘区域的方法公开(公告)号:JPS598351A
公开(公告)日:1984-01-17
申请号:JP6850083
申请日:1983-04-20
Applicant: Ibm
IPC: H01L21/76 , H01L21/20 , H01L21/74 , H01L21/763
CPC classification number: H01L21/763 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/743
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公开(公告)号:JPS5734365A
公开(公告)日:1982-02-24
申请号:JP8977181
申请日:1981-06-12
Applicant: Ibm
Inventor: AANORUDO RAIZUMAN , BIKUTAA JIYOSEFU SHIRUBESUTORI , DENII DEYUANNRII TANGU , JIIKUFURIEDO KURUTO BIIDOMAN , UWA NIEN YU
IPC: H01L29/73 , H01L21/20 , H01L21/331 , H01L21/74 , H01L21/762 , H01L21/8226 , H01L27/082 , H01L29/423
CPC classification number: H01L21/76248 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/743 , H01L27/0821 , H01L29/42304
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公开(公告)号:JPS587840A
公开(公告)日:1983-01-17
申请号:JP6484882
申请日:1982-04-20
Applicant: IBM
IPC: H01L27/10 , H01L21/3205 , H01L21/331 , H01L21/74 , H01L21/76 , H01L21/762 , H01L21/8242 , H01L23/52 , H01L23/535 , H01L27/108 , H01L29/06 , H01L29/73
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