公开(公告)号：EP4137790A1

公开(公告)日：2023-02-22

申请号：EP22200035.8

申请日：2010-11-30

Applicant: Imec VZW

Inventor： TACK, Klaas ,  LAMBRECHTS, Andy ,  HASPESLAGH, Luc

IPC: G01J3/26 ,  G01J3/28 ,  G01J3/12

Abstract: The invention refers to an integrated circuit for an imaging system having arrays of optical sensors (40) and of optical filters (10), integrated with each other, each configured to pass a band of wavelengths, and further having read out circuitry (30) to read out pixel values from the array of sensors (40) to represent an image. Different ones of the optical filters (10) have different thicknesses to pass different bands of wavelengths by means of interference, to allow detection of a spectrum of wavelengths. The read out circuitry (30) has a wavelength selector for selecting between or combining read out signals of corresponding pixels of different optical filters (10). The invention further refers to an imaging system comprising such an integrated circuit and to a method of operating the imaging system to produce an output image by performing hyperspectral imaging.

公开(公告)号：EP3806152A1

公开(公告)日：2021-04-14

申请号：EP19202647.4

申请日：2019-10-11

Applicant: Imec VZW ,  Katholieke Universiteit Leuven, K.U.Leuven R&D

Inventor： SOUSSAN, Philippe ,  MOTSNYI, Vasyl ,  HASPESLAGH, Luc ,  GUERRIERI, Stefano ,  SYSHCHYK, Olga ,  KUNERT, Bernardette ,  LANGER, Robert

IPC: H01L27/146

Abstract: The present invent provides a method comprising forming (101) a first wafer (10) comprising a first substrate (11) of a group IV semiconductor, and a group III-V semiconductor device structure (12) formed by selective area epitaxial growth on a surface portion (13a) of a front side (13) of the first substrate (11). The method further comprises forming (102) a second wafer (20) comprising a second substrate (21) of a group IV semiconductor, and a group IV semiconductor device structure (22) formed on a front side (23) of the second substrate (21), and bonding (103) the first wafer (10) to the second wafer (20) with the front side (13) of the first substrate (11) facing the front side (23) of the second wafer (21).