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公开(公告)号：US12033682B2
公开(公告)日：2024-07-09
申请号：US17563100
申请日：2021-12-28
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Jeng-Hua Wei , I-Jung Wang , Shan-Yi Yang , Yao-Jen Chang , Fang-Ming Chen
CPC classification number: G11C11/161 , G11C11/1675 , H10B61/00 , H10N50/80 , H10N50/85 , H10N52/80
Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a pinned layer. The barrier layer is disposed on the free layer, and the pinned layer is disposed on the barrier layer. A film surface shape of the free layer is a rounded rectangle.
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公开(公告)号：US20200058847A1
公开(公告)日：2020-02-20
申请号：US16664947
申请日：2019-10-28
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Shan-Yi Yang , Yao-Jen Chang , I-Jung Wang , Jeng-Hua Wei
Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The magnetic tunnel junction comprises a free layer, a tunneling barrier layer, and pinned layer. The tunneling barrier layer is disposed on the free layer. The pinned layer is disposed on the tunneling barrier layer. A film plane area of the free layer is greater than a film plane area of the tunneling barrier layer and a film plane area of the pinned layer.
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公开(公告)号：US20230178130A1
公开(公告)日：2023-06-08
申请号：US17563100
申请日：2021-12-28
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Jeng-Hua Wei , I-Jung Wang , Shan-Yi Yang , Yao-Jen Chang , Fang-Ming Chen
CPC classification number: G11C11/161 , G11C11/1675 , H01L43/02 , H01L27/222 , H01L43/10
Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a pinned layer. The barrier layer is disposed on the free layer, and the pinned layer is disposed on the barrier layer. A film surface shape of the free layer is a rounded rectangle.
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公开(公告)号：US10784441B2
公开(公告)日：2020-09-22
申请号：US16664947
申请日：2019-10-28
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Shan-Yi Yang , Yao-Jen Chang , I-Jung Wang , Jeng-Hua Wei
Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The magnetic tunnel junction comprises a free layer, a tunneling barrier layer, and pinned layer. The tunneling barrier layer is disposed on the free layer. The pinned layer is disposed on the tunneling barrier layer. A film plane area of the free layer is greater than a film plane area of the tunneling barrier layer and a film plane area of the pinned layer.
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公开(公告)号：US11844288B2
公开(公告)日：2023-12-12
申请号：US17168146
申请日：2021-02-04
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Jeng-Hua Wei , I-Jung Wang , Shan-Yi Yang , Yao-Jen Chang
Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an upper electrode and a magnetic tunnel junction. The magnetic tunnel junction is disposed between the heavy metal layer and the upper electrode. The magnetic tunnel junction includes a free layer and a pinned layer. The free layer is disposed on the heavy metal layer, and the free layer has a first film plane area. The pinned layer is disposed on the free layer, and the pinned layer has a second film plane area. There is a preset angle between a long axis direction of a film plane shape of the free layer and a long axis direction of a film plane shape of the pinned layer, and the first film plane area is larger than the second film plane area.
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Patent Agency Ranking
公开(公告)号：US20190123265A1
公开(公告)日：2019-04-25
申请号：US16219980
申请日：2018-12-14
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Shan-Yi Yang , Yu-Sheng Chen , Yao-Jen Chang
CPC classification number: H01L43/08 , G11C11/161 , G11C11/18 , H01L43/02 , H01L43/10
Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.
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公开(公告)号：US20180067175A1
公开(公告)日：2018-03-08
申请号：US15394836
申请日：2016-12-30
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Yu-Sheng Chen , Ding-Yeong Wang , Yu-Chen Hsin
IPC: G01R33/12
Abstract: A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.
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公开(公告)号：US10725126B2
公开(公告)日：2020-07-28
申请号：US15394836
申请日：2016-12-30
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Yu-Sheng Chen , Ding-Yeong Wang , Yu-Chen Hsin
Abstract: A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.
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公开(公告)号：US10553788B2
公开(公告)日：2020-02-04
申请号：US16219980
申请日：2018-12-14
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Shan-Yi Yang , Yu-Sheng Chen , Yao-Jen Chang
Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.
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公开(公告)号：US10193059B2
公开(公告)日：2019-01-29
申请号：US15358157
申请日：2016-11-22
Applicant: Industrial Technology Research Institute
Inventor： Hsin-Han Lee , Shan-Yi Yang , Yu-Sheng Chen , Yao-Jen Chang
Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.
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