公开(公告)号：US20240348244A1

公开(公告)日：2024-10-17

申请号：US18634554

申请日：2024-04-12

Applicant: Infineon Technologies AG

Inventor： Christian Djelassi-Tscheck ,  Benno Köppl ,  Andre Mourrier ,  Mario Tripolt

IPC: H03K17/10 ,  H03K17/0412 ,  H03K17/30

CPC classification number: H03K17/102 ,  H03K17/04123 ,  H03K17/302

Abstract: In accordance with an embodiment, a method includes: operating a driver circuit in an idle mode in which portion of the driver circuit are deactivated, wherein the driver circuit is coupled to a first transistor and a second transistor coupled between a supply node and a first circuit node configured to be connected to a load, and operating the driver circuit in the idle mode comprises the driver circuit switching off the first transistor, switching on the second transistor; detecting a change in a voltage across the first transistor; and in response to the change in voltage being detected, activating the inactive portions of the driver circuit to switch on the first transistor and leave the idle mode.

公开(公告)号：US10998898B2

公开(公告)日：2021-05-04

申请号：US16227894

申请日：2018-12-20

Applicant: Infineon Technologies AG

Inventor： Robert Illing ,  Christian Djelassi-Tscheck ,  Alexander Mayer

IPC: H03K17/08 ,  H03K17/082 ,  H03K17/0812

Abstract: A method includes monitoring a load path voltage and an operating parameter of the transistor device; operating the transistor device in a normal mode when the operating parameter is below a threshold associated with the operating parameter, where operating the transistor device in the normal mode includes operating the transistor device in one of an on-state or an off-state based on a drive signal; and operating the transistor device in a fault mode upon detecting a fault based on comparing the operating parameter with the threshold. Operating the transistor device in the fault mode includes switching off the transistor device, operating the transistor device in the on-state includes adjusting the threshold in accordance with a first characteristic curve dependent on the load path voltage, and operating the transistor device in the off-state includes adjusting the threshold according to a second characteristic curve different from the first characteristic curve.

公开(公告)号：US20250015796A1

公开(公告)日：2025-01-09

申请号：US18763431

申请日：2024-07-03

Applicant: Infineon Technologies AG

Inventor： Christian Djelassi-Tscheck ,  Mario Tripolt

IPC: H03K17/16 ,  H03K17/22 ,  H03K17/30

Abstract: In accordance with an embodiment, a method includes activating a semiconductor switch coupled between a supply node and an output node to apply an output voltage to an electrical load coupled to the output node, wherein a supply voltage is provided to the supply node; and performing a leakage current test, comprising: deactivating the semiconductor switch to isolate the electrical load from the supply node; after deactivating the semiconductor switch, checking whether a time that elapses until the output voltage falls below a first voltage level is less than a threshold value; and activating the semiconductor switch after the checking.

公开(公告)号：US11955957B2

公开(公告)日：2024-04-09

申请号：US17455131

申请日：2021-11-16

Applicant: Infineon Technologies AG

Inventor： Christian Djelassi-Tscheck ,  Michael Asam ,  Mirko Bernardoni ,  David Jacquinod ,  Andre Mourrier ,  Mario Tripolt

IPC: H03K17/082 ,  H03K17/0814

CPC classification number: H03K17/0822 ,  H03K17/08142

Abstract: In accordance with an embodiment, a circuit for driving an electronic switch includes a control circuit configured to trigger a switch-on and a switch-off of the electronic switch in accordance with an input signal, wherein the control circuit is further configured to trigger the switch-off of the electronic switch in response to an under-voltage signal signaling an under-voltage state; and an under-voltage detection circuit configured to signal the under-voltage state when a supply voltage received at a supply node is below an under-voltage threshold value, wherein the under-voltage threshold value depends on a load current passing through the electronic switch.

公开(公告)号：US11431162B2

公开(公告)日：2022-08-30

申请号：US16991930

申请日：2020-08-12

Applicant: Infineon Technologies AG

Inventor： Christian Djelassi-Tscheck ,  Bernhard Auer ,  Thomas Blasius ,  Robert Illing ,  David Jacquinod ,  Michael Luschin ,  Andre Mourrier ,  Mario Tripolt

IPC: H02H3/10 ,  H02H9/02 ,  H02H5/04 ,  H02H1/00

Abstract: An integrated circuit that may be employed as a smart switch is described herein. In accordance with one embodiment the integrated circuit includes a power transistor coupled between a supply pin and an output pin and further includes a control circuit configured to trigger a switch-on and a switch-off of the power transistor in accordance with an input signal. The control circuit is configured to trigger a switch-off of the power transistor when a load current passing through the power transistor is at or above a predetermined current and a supply voltage received at the supply pin is at or below a predetermined threshold voltage.

公开(公告)号：US20210273634A1

公开(公告)日：2021-09-02

申请号：US17173772

申请日：2021-02-11

Applicant: Infineon Technologies AG

Inventor： Christian Djelassi-Tscheck ,  Ulisse Lorenzo Lillo ,  Michael Luschin ,  Mario Tripolt

IPC: H03K17/082 ,  H02H1/00

Abstract: In accordance with an embodiment, a circuit includes: a supply pin and an output pin for connecting a load, and a configuration pin; a semiconductor switch connected between the supply pin and the output pin and configured to establish or to block a current path between the supply pin and the output pin depending on a control signal; and a control circuit configured to generate the control signal for the semiconductor switch taking account of a first parameter, and set the first parameter depending on a component parameter of an external component connected to the configuration pin. The first parameter is set to a first standard value when the component parameter is less than a first threshold value, and the first parameter is set to a second standard value when the component parameter is greater than a second threshold value.

公开(公告)号：US10707856B2

公开(公告)日：2020-07-07

申请号：US15708839

申请日：2017-09-19

Applicant: Infineon Technologies AG

Inventor： Florian Brugger ,  Christian Djelassi-Tscheck ,  Alexander Mayer

IPC: H03K17/00 ,  H03K17/082 ,  H03K17/12 ,  H03K17/0812 ,  H02H3/087 ,  H02H1/00 ,  H02H3/05

Abstract: A circuit comprises a first metal-oxide semiconductor, MOS, power transistor having a first gate terminal, a first drain terminal, and a first source terminal, a second MOS power transistor having a second gate terminal, a second drain terminal, and a second source terminal, and a switch connected in-between the first gate terminal and the second gate terminal and configured to selectively couple the first gate terminal and the second gate terminal.

公开(公告)号：US20230194595A1

公开(公告)日：2023-06-22

申请号：US18061168

申请日：2022-12-02

Applicant: Infineon Technologies AG

Inventor： Christian Djelassi-Tscheck ,  Cristian Mihai Boianceanu ,  Michael Nelhiebel

IPC: G01R31/28

CPC classification number: G01R31/2879 ,  G01R31/2856

Abstract: A circuit includes a power transistor having a main current path between a first supply node and an output pin for connecting a load. A resistance formed by a chip metallization is arranged between the main current path of the power transistor and the output pin. The circuit includes a current measuring circuit coupled to the power transistor and including a sense transistor coupled to the power transistor. The current measuring circuit delivers a measurement current representing a load current flowing through the power transistor. An amplifier circuit generates an amplifier output signal representing the voltage across the resistance, and a control circuit outputs a signal representing the measurement current in a first mode and a signal dependent on the amplifier output signal in a second mode.

公开(公告)号：US20220166422A1

公开(公告)日：2022-05-26

申请号：US17455131

申请日：2021-11-16

Applicant: Infineon Technologies AG

Inventor： Christian Djelassi-Tscheck ,  Michael Asam ,  Mirko Bernardoni ,  David Jacquinod ,  Andre Mourrier ,  Mario Tripolt

IPC: H03K17/082 ,  H03K17/0814

Abstract: In accordance with an embodiment, a circuit for driving an electronic switch includes a control circuit configured to trigger a switch-on and a switch-off of the electronic switch in accordance with an input signal, wherein the control circuit is further configured to trigger the switch-off of the electronic switch in response to an under-voltage signal signaling an under-voltage state; and an under-voltage detection circuit configured to signal the under-voltage state when a supply voltage received at a supply node is below an under-voltage threshold value, wherein the under-voltage threshold value depends on a load current passing through the electronic switch.

公开(公告)号：US20220069560A1

公开(公告)日：2022-03-03

申请号：US17387253

申请日：2021-07-28

Applicant: Infineon Technologies AG

Inventor： Mirko Bernardoni ,  Michael Asam ,  Christian Djelassi-Tscheck ,  Robert Illing ,  Martin Ringswirth ,  Mario Tripolt

IPC: H02H3/08 ,  G01R19/165 ,  G01R19/00

Abstract: A circuit includes a monitor circuit. The monitor circuit includes a nonlinear functional unit configured to receive a current sense signal and to generate a power signal representing the power of the current sense signal. The circuit further includes a first filter configured to receive the power signal and to generate a first filtered signal and a second filter configured to receive an input signal that depends on the current sense signal and to generate a second filtered signal. A comparator circuit is configured to receive the first filtered signal and the second filtered signal and to compare the first filtered signal with a first threshold value and the second filtered signal with a second threshold value. The protection signal is indicative of whether the first filtered signal exceeds the first threshold value or the second filtered signal exceeds the second threshold value.