公开(公告)号：US20210035882A1

公开(公告)日：2021-02-04

申请号：US16944325

申请日：2020-07-31

Applicant: Infineon Technologies AG

Inventor： Josef Schaetz ,  Dethard Peters ,  Stephan Pindl ,  Hans-Joachim Schulze

IPC: H01L23/373 ,  H01L29/423 ,  H01L29/51 ,  H01L23/367 ,  H01L29/40 ,  H01L29/16 ,  H01L29/78 ,  H01L29/06

Abstract: A power semiconductor device includes: a semiconductor body having a front side and a backside and configured to conduct a load current between the front side and the backside; and a plurality of control cells configured to control the load current. Each control cell is at least partially included in the semiconductor body at the front side and includes a gate electrode that is electrically insulated from the semiconductor body by a gate insulation layer. The gate insulation layer is or includes a first boron nitride layer.

公开(公告)号：US11652022B2

公开(公告)日：2023-05-16

申请号：US16944325

申请日：2020-07-31

Applicant: Infineon Technologies AG

Inventor： Josef Schaetz ,  Dethard Peters ,  Stephan Pindl ,  Hans-Joachim Schulze

IPC: H01L23/373 ,  H01L29/423 ,  H01L29/51 ,  H01L29/06 ,  H01L29/40 ,  H01L29/16 ,  H01L29/78 ,  H01L23/367 ,  H01L29/66 ,  H01L29/739

CPC classification number: H01L23/373 ,  H01L23/367 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802

Abstract: A power semiconductor device includes: a semiconductor body having a front side and a backside and configured to conduct a load current between the front side and the backside; and a plurality of control cells configured to control the load current. Each control cell is at least partially included in the semiconductor body at the front side and includes a gate electrode that is electrically insulated from the semiconductor body by a gate insulation layer. The gate insulation layer is or includes a first boron nitride layer.