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    LIGHT-EMITTING DEVICE HAVING III-V SEMICONDUCTOR GAIN SECTION COUPLED TO WHISTLE-GEOMETRY TUNABLE FILTER
    2.
    发明申请
    LIGHT-EMITTING DEVICE HAVING III-V SEMICONDUCTOR GAIN SECTION COUPLED TO WHISTLE-GEOMETRY TUNABLE FILTER 审中-公开
    具有与几何可调滤波器相连的III-V半导体增益部分的发光装置

    公开(公告)号：WO2017001466A1

    公开(公告)日：2017-01-05

    申请号：PCT/EP2016/065125

    申请日：2016-06-29

    Applicant: INSTITUT MINES-TELECOM ,  UNIVERSITY OF NEW MEXICO

    Inventor： OSINSKI, Marek ,  GRILLOT, Frédéric

    IPC: H01S5/026 ,  H01S5/10 ,  H01S5/14 ,  H01S5/02 ,  H01S5/022 ,  H01S5/06

    CPC classification number: H01S5/1028 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/0228 ,  H01S5/0612 ,  H01S5/068 ,  H01S5/101 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/142 ,  H01S5/34313 ,  H01S5/3434

    Abstract: The invention concerns a wavelength tunable semiconductor laser comprising a laser gain section (510) optically coupled to an underlying optical waveguide (520). According to an embodiment of the invention, a first and a second passive microring resonators (530, 560) having a whistle geometry, are arranged on both sides of the laser gain section and evanescently coupled with the optical waveguide (520). Highly reflective broadband mirrors (541, 571) are provided at the free ends of optical waveguide branches (240, 270) tangentially connected to the microring resonators. The first and second passive microrings resonators provide an optical feedback to the laser gain section and allow to select the desired wavelength. The laser structure can be implemented according to a III-V/Si technology.

    Abstract translation: 本发明涉及一种包括光学耦合到下面的光波导（520）的激光增益部分（510）的波长可调谐半导体激光器。 根据本发明的实施例，具有口哨几何形状的第一和第二无源微环谐振器（530,560）被布置在激光增益部分的两侧上，并与光波导（520）瞬时耦合。 在与微环谐振器切向连接的光波导分支（240,270）的自由端处提供高反射宽带镜（541,571）。 第一和第二无源微环谐振器向激光增益部分提供光学反馈并允许选择所需的波长。 激光器结构可以根据III-V / Si技术实现。

    LIGHT-EMITTING DEVICE HAVING III-V SEMICONDUCTOR GAIN SECTION COUPLED TO WHISTLE-GEOMETRY TUNABLE FILTER
    3.
    发明公开
    LIGHT-EMITTING DEVICE HAVING III-V SEMICONDUCTOR GAIN SECTION COUPLED TO WHISTLE-GEOMETRY TUNABLE FILTER 审中-公开
    发光装置提供WITH哨几何的可调谐滤波器，耦合III-V族半导体增益部

    公开(公告)号：EP3113303A1

    公开(公告)日：2017-01-04

    申请号：EP15174743.3

    申请日：2015-07-01

    Applicant: Institut Mines-Telecom ,  University Of New Mexico

    Inventor： OSINSKI, Marek ,  GRILLOT, Frédéric

    IPC: H01S5/026 ,  H01S5/10 ,  H01S5/14 ,  H01S5/02 ,  H01S5/022

    Abstract: The invention concerns a wavelength tunable semiconductor laser comprising a laser gain section (510) optically coupled to an underlying optical waveguide (520). According to an embodiment of the invention, a first and a second passive microring resonators (530, 560) having a whistle geometry, are arranged on both sides of the laser gain section and evanescently coupled with the optical waveguide (520). Highly reflective broadband mirrors (541, 571) are provided at the free ends of optical waveguide branches (240,270) tangentially connected to the microring resonators. The first and second passive microrings resonators provide an optical feedback to the laser gain section and allow to select the desired wavelength. The laser structure can be implemented according to a III-V/Si technology.

    Abstract translation: 本发明涉及一种波长可调半导体激光包括底层光波导（520），其光学耦合至激光增益部分（510）。 。根据在本发明中，第一和具有哨子几何形状的第二无源微环谐振器（530，560）的实施例，被布置在激光增益部分的bothsides和渐逝地耦合与光波导（520）。 高反射镜宽带（541，571）中的光波导分支（240.270）相切地连接到微环谐振器的自由端部设置。 第一和第二无源微环形谐振器上的光学增益的激光部分提供反馈，并且允许选择所需的波长。 激光器结构可以被实现gemäß到III-V族/ Si的技术。

    RING LASER INTEGRATED WITH SILICON-ON-INSULATOR WAVEGUIDE
    4.
    发明申请
    RING LASER INTEGRATED WITH SILICON-ON-INSULATOR WAVEGUIDE 审中-公开
    环形激光器与硅绝缘体波导集成

    公开(公告)号：WO2017200620A2

    公开(公告)日：2017-11-23

    申请号：PCT/US2017/019907

    申请日：2017-02-28

    Applicant: STC.UNM

    Inventor： OSINSKI, Marek ,  SMOLYAKOV, Gennady A.

    CPC classification number: H01S5/4006 ,  H01S5/021 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/1071 ,  H01S5/141 ,  H01S5/142

    Abstract: The present invention provides one or more injection-lockable whistle-geometry semiconductor ring lasers, which may be cascaded, that are integrated on a common silicon-on-insulator (SOI) substrate with a single-frequency semiconductor master laser, wherein the light output from the semiconductor master laser is used to injection-lock the first of the semiconductor ring lasers. The ring lasers can be operated in strongly injection-locked mode, while at least one of them is subjected to direct injection current modulation.

    Abstract translation: 本发明提供了一种或多种可级联注入锁定的口哨几何结构半导体环形激光器，其可以级联，集成在具有单频率的公共绝缘体上硅（SOI）衬底上 半导体主激光器，其中从半导体主激光器输出的光被用于注入锁定第一半导体环激光器。 环形激光器可以在强烈的注入锁定模式下工作，而其中至少有一个受到直接注入电流调制。

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