公开(公告)号：US20030160022A1

公开(公告)日：2003-08-28

申请号：US10083990

申请日：2002-02-26

Applicant: Institute of Microelectronics.

Inventor： Zhe Wang ,  Qingxin Zhang ,  Pang Dow Foo ,  Hanhua Feng

IPC: C23F001/00 ,  H01L021/302 ,  H01L021/461

CPC classification number: H01L21/67086 ,  H01L21/30608 ,  H01L21/6708

Abstract: When using hot alkaline etchants such as KOH, the wafer front side, where various devices and/or circuits are located, must be isolated from any contact with the etchant. This has been achieved by using two chambers that are separated from each other by the wafer that is to be etched. Etching solution in one chamber is in contact with the wafer's back surface while deionized water in the other chamber contacts the front surface. The relative liquid pressures in the chambers is arranged to be slightly higher in the chamber of the front surface so that leakage of etchant through a pin hole from back surface to front surface does not occur. As a further precaution, a monitor to detect the etchant is located in the DI water so that, if need be, etching can be terminated before irreparable damage is done.

Abstract translation: 当使用诸如KOH的热碱性蚀刻剂时，其中各种装置和/或电路所在的晶片正面必须与与蚀刻剂的任何接触隔离。 这是通过使用被待蚀刻的晶片彼此分离的两个室来实现的。 一个室中的蚀刻溶液与晶片的背面接触，而另一个室中的去离子水接触前表面。 腔室中的相对液体压力被布置为在前表面的腔室中略高，使得蚀刻剂不会通过针孔从背表面泄漏到前表面。 作为进一步的预防措施，用于检测蚀刻剂的监测器位于去离子水中，使得如果需要，可以在不可修复的损伤完成之前终止蚀刻。