公开(公告)号：US20230354723A1

公开(公告)日：2023-11-02

申请号：US17735113

申请日：2022-05-02

Applicant: Intel Corporation

Inventor： Gowtham Sriram Jawaharram ,  Cyrus M. Fox ,  Jose L. Cruz-Campa ,  Shafaat Ahmed ,  Qiaoer Zhou ,  Duo Li ,  Hong Li

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1253 ,  H01L27/2427 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1675

Abstract: In one embodiment, a crosspoint memory device is manufactured by forming a material stack and patterning the material stack to form a plurality of memory cells of the cross point memory device. Forming the material stack includes depositing a select device (SD) region material comprising chalcogenide, depositing a layer comprising carbon on the SD region material at a temperature below 40° C., depositing an ohmic contact layer on the layer comprising carbon, and depositing a phase change material (PM) region material comprising chalcogenide on the ohmic contact layer.