公开(公告)号：US11482644B2

公开(公告)日：2022-10-25

申请号：US16147748

申请日：2018-09-29

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Sansaptak Dasgupta ,  Ivan-Christophe Robin

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  H01L33/44 ,  H01L33/22 ,  H01L27/15 ,  H01L33/60 ,  H01L33/36

Abstract: Embodiments described herein comprise micro light emitting diodes (LEDs) and methods of forming such micro LEDs. In an embodiment, a nanowire LED comprises a nanowire core that includes GaN, an active layer shell around the nanowire core, where the active layer shell includes InGaN, a cladding layer shell around the active layer shell, where the cladding layer comprises p-type GaN, a conductive layer over the cladding layer, and a spacer surrounding the conductive layer. In an embodiment, a refractive index of the spacer is less than a refractive index of the cladding layer shell.