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公开(公告)号:US20240014149A1
公开(公告)日:2024-01-11
申请号:US18372533
申请日:2023-09-25
Applicant: Intel Corporation
Inventor: Aleksandar ALEKSOV , Thomas SOUNART , Kristof DARMAWIKARTA , Henning BRAUNISCH , Prithwish CHATTERJEE , Andrew J. BROWN
IPC: H01L23/64 , H01L23/498 , H01L23/00 , H01L21/48
CPC classification number: H01L23/642 , H01L23/49894 , H01L23/49838 , H01L24/16 , H01L23/49827 , H01L21/4846 , H01L2224/16265 , H01L2224/16225 , H01L2924/19103 , H01L2924/19041
Abstract: Embodiments include an electronic package that includes a dielectric layer and a capacitor on the dielectric layer. In an embodiment, the capacitor comprises a first electrode disposed over the dielectric layer and a capacitor dielectric layer over the first electrode. In an embodiment, the capacitor dielectric layer is an amorphous dielectric layer. In an embodiment, the electronic package may also comprise a second electrode over the capacitor dielectric layer.
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公开(公告)号:US20200350303A1
公开(公告)日:2020-11-05
申请号:US16400768
申请日:2019-05-01
Applicant: Intel Corporation
Inventor: Thomas SOUNART , Aleksandar ALEKSOV , Henning BRAUNISCH
IPC: H01L27/01 , H01L23/00 , H01L21/47 , H01L49/02 , H01L23/522
Abstract: Embodiments described herein are directed to a thin film capacitor (TFC) for power delivery that is in situ in a package substrate and techniques of fabricating the TFC. In one example, the TFC includes a first electrode, a dielectric layer over the first electrode, and a second electrode over the dielectric layer. Each of the dielectric layer and the second electrode comprises an opening. Furthermore, the two openings are positioned over one another such that the openings expose a surface of the first electrode. In this example, a first vertical interconnect access (via) is positioned on the exposed surface of the first electrode and a second via is positioned on an exposed surface of the second electrode. The TFC can be positioned in or on a layer of the package substrate close to a component (e.g., a die, a die stack, etc.) on the package substrate that may require a decoupling capacitance.
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