公开(公告)号：US20200286982A1

公开(公告)日：2020-09-10

申请号：US16881954

申请日：2020-05-22

Applicant: Intel IP Corporation

Inventor： Veronica Sciriha ,  Georg Seidemann

IPC: H01L49/02 ,  H01L23/522 ,  H01L23/00 ,  H01L23/64

Abstract: A system and method of providing a coil in an electronic communication device in is disclosed. Multiple dielectric layers are deposited and patterned on a semiconductor substrate or insulating mold compound. The dielectric layers provide conductive contact with a contact pad on the underlying structure. Shielding for the coil, including a seed layer covered by an insulating material, is disposed in a via of a lowermost of the dielectric layers. Grounding of the shielding seed layer is through a contact pad on the substrate or a trace between the dielectric layers. A coil is fabricated over the shielding and a solder mask deposited and patterned to cover and insulate the coil. The coil is fabricated in a via of a dielectric layer immediately below the solder mask or above this dielectric layer. Electrical contact is provided by multiple copper and seed layers in the solder mask and dielectric layers.

公开(公告)号：US20200006244A1

公开(公告)日：2020-01-02

申请号：US16020772

申请日：2018-06-27

Applicant: Intel IP Corporation

Inventor： Veronica Sciriha ,  Georg Seidemann

IPC: H01L23/552 ,  H01L49/02 ,  H01L23/522 ,  H01L23/00

Abstract: A system and method of providing a coil in an electronic communication device in is disclosed. Multiple dielectric layers are deposited and patterned on a semiconductor substrate or insulating mold compound. The dielectric layers provide conductive contact with a contact pad on the underlying structure. Shielding for the coil, including a seed layer covered by an insulating material, is disposed in a via of a lowermost of the dielectric layers. Grounding of the shielding seed layer is through a contact pad on the substrate or a trace between the dielectric layers. A coil is fabricated over the shielding and a solder mask deposited and patterned to cover and insulate the coil. The coil is fabricated in a via of a dielectric layer immediately below the solder mask or above this dielectric layer. Electrical contact is provided by multiple copper and seed layers in the solder mask and dielectric layers.

公开(公告)号：US10700159B2

公开(公告)日：2020-06-30

申请号：US16020772

申请日：2018-06-27

Applicant: Intel IP Corporation

Inventor： Veronica Sciriha ,  Georg Seidemann

IPC: H01L23/64 ,  H01L49/02 ,  H01L23/522 ,  H01L23/00

Abstract: A system and method of providing a coil in an electronic communication device in is disclosed. Multiple dielectric layers are deposited and patterned on a semiconductor substrate or insulating mold compound. The dielectric layers provide conductive contact with a contact pad on the underlying structure. Shielding for the coil, including a seed layer covered by an insulating material, is disposed in a via of a lowermost of the dielectric layers. Grounding of the shielding seed layer is through a contact pad on the substrate or a trace between the dielectric layers. A coil is fabricated over the shielding and a solder mask deposited and patterned to cover and insulate the coil. The coil is fabricated in a via of a dielectric layer immediately below the solder mask or above this dielectric layer. Electrical contact is provided by multiple copper and seed layers in the solder mask and dielectric layers.

公开(公告)号：US20190304922A1

公开(公告)日：2019-10-03

申请号：US15937542

申请日：2018-03-27

Applicant: Intel IP Corporation

Inventor： Saravana Maruthamuthu ,  Thomas Ort ,  Andreas Wolter ,  Andreas Augustin ,  Veronica Sciriha ,  Bernd Waidhas

IPC: H01L23/552 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H01L23/31 ,  H01L23/64

Abstract: A microelectronic device may include a substrate, a component, a first plate, a second plate, and a shield. The component may be disposed at least partially within the substrate. The first plate may be disposed on a first side of the component. The second plate may be disposed on a second side of the component. The shield may be disposed around at least a portion of a periphery of the component.