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Patent Agency Ranking1.发明公开Method of controlling stress in a polycrystalline SiGe layer deposited on a substrate 失效一种用于在衬底上沉积多晶SiGe层应力控制方法
公开(公告)号：EP1263056A2
公开(公告)日：2002-12-04
申请号：EP02077978.1
申请日：1998-03-26
Applicant: Interuniversitair Micro-Elektronica Centrum
Inventor： Fiorini, Paolo , Sedky, Sherif , Caymax, Matty , Baert, Christiaan
IPC: H01L31/18
CPC classification number: B81C1/00666 , B81C2201/017 , G01J5/20 , H01L31/09 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate by varying the deposition pressure.
Abstract translation: 控制通过改变沉积压力沉积在基底的多晶SiGe层的应力的方法。
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2.发明授权Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer 失效用于制造红外线敏感辐射检测器，特别是红外线敏感测辐射热计方法
公开(公告)号：EP0867702B1
公开(公告)日：2003-03-12
申请号：EP98870058.9
申请日：1998-03-26
Inventor： Fiorini, Paolo , Sedky, Sherif , Caymax, Matty , Baert, Christiaan
CPC classification number: B81C1/00666 , B81C2201/017 , G01J5/20 , H01L31/09 , H01L31/1804 , Y02E10/547 , Y02P70/521
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3.发明公开Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer 失效红外辐射探测器的制造方法，尤其是红外敏感辐射热测量计的制造方法
公开(公告)号：EP0867702A3
公开(公告)日：1998-10-21
申请号：EP98870058.9
申请日：1998-03-26
Inventor： Fiorini, Paolo , Sedky, Sherif , Caymax, Matty , Baert, Christiaan
CPC classification number: B81C1/00666 , B81C2201/017 , G01J5/20 , H01L31/09 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of fabricating an infrared sensitive bolometer, comprising the steps of:
forming a sacrificial layer (11, 12 or 43) on a substrate (10 or 41); patterning said sacrificial layer (11, 12 or 43) ; depositing or growing a layer (13 or 42) consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber (49) on said polycrystalline SiGe layer; removing the sacrificial layer (11, 12 or 43).Abstract translation: 一种制造红外敏感辐射热测量计的方法，包括以下步骤：在衬底（10或41）上形成牺牲层（11,12或43）; 图案化所述牺牲层（11,12或43）; 在所述牺牲层上沉积或生长基本上由多晶SiGe组成的层（13或42）; 在所述多晶SiGe层上沉积红外吸收剂（49）; 去除牺牲层（11,12或43）。
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4.发明公开Method of controlling stress in a polycrystalline SiGe layer deposited on a substrate 失效一种用于在衬底上沉积多晶SiGe层应力控制方法
公开(公告)号：EP1263056A3
公开(公告)日：2003-12-03
申请号：EP02077978.1
申请日：1998-03-26
Applicant: Interuniversitair Micro-Elektronica Centrum
Inventor： Fiorini, Paolo , Sedky, Sherif , Caymax, Matty , Baert, Christiaan
IPC: H01L31/18 , H01L21/3205
CPC classification number: B81C1/00666 , B81C2201/017 , G01J5/20 , H01L31/09 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate by varying the deposition pressure.
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5.发明公开Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer 失效赫斯特伦·弗朗西斯·弗朗西斯·弗朗西斯科·史密斯·德特科
公开(公告)号：EP0867702A2
公开(公告)日：1998-09-30
申请号：EP98870058.9
申请日：1998-03-26
Inventor： Fiorini, Paolo , Sedky, Sherif , Caymax, Matty , Baert, Christiaan
CPC classification number: B81C1/00666 , B81C2201/017 , G01J5/20 , H01L31/09 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of fabricating an infrared sensitive bolometer, comprising the steps of:
forming a sacrificial layer (11, 12 or 43) on a substrate (10 or 41);
patterning said sacrificial layer (11, 12 or 43) ;
depositing or growing a layer (13 or 42) consisting essentially of polycrystalline SiGe on said sacrificial layer;
depositing an infrared absorber (49) on said polycrystalline SiGe layer;
removing the sacrificial layer (11, 12 or 43).Abstract translation: 一种制造红外敏感辐射热计的方法，包括以下步骤：在衬底（10或41）上形成牺牲层（11,12或43）; 图案化所述牺牲层（11,12或43）; 在所述牺牲层上沉积或生长基本上由多晶SiGe组成的层（13或42）; 在所述多晶SiGe层上沉积红外吸收体（49）; 去除牺牲层（11,12或43）。
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