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1.发明申请OXIDE LAYER AND PRODUCTION METHOD FOR OXIDE LAYER, AS WELL AS CAPACITOR, SEMICONDUCTOR DEVICE, AND MICROELECTROMECHANICAL SYSTEM PROVIDED WITH OXIDE LAYER 审中-公开含氧层的氧化层和生产方法，作为电容器，半导体器件和提供氧化层的微电子系统公开(公告)号：US20160016813A1
公开(公告)日：2016-01-21
申请号：US14773309
申请日：2014-01-06
Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
Inventor： Tatsuya SHIMODA , Eisuke TOKUMITSU , Masatoshi ONOUE , Takaaki MIYASAKO
CPC classification number: C01G33/006 , C01P2002/36 , C01P2004/04 , C01P2006/40 , C23C18/1216 , C23C18/1279 , C23C18/1283 , H01B1/08 , H01G4/10 , H01G4/33 , H01L28/40
Abstract: An oxide layer 30 according to the invention consists of bismuth (Bi) and niobium (Nb) (possibly including inevitable impurities). The oxide layer 30 also includes crystal phases of a pyrochlore crystal structure. The obtained oxide layer 30 includes oxide consisting of bismuth (Bi) and niobium (Nb) and has high permittivity that has never been achieved in the conventional technique.
Abstract translation: 根据本发明的氧化物层30由铋（Bi）和铌（Nb）（可能包括不可避免的杂质）组成。 氧化物层30还包括烧绿石晶体结构的晶相。 所获得的氧化物层30包括由铋（Bi）和铌（Nb）组成的氧化物，并且在传统技术中从未实现高电容率。
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2.发明申请DIELECTRIC LAYER AND MANUFACTURING METHOD OF DIELECTRIC LAYER, AND SOLID-STATE ELECTRONIC DEVICE AND MANUFACTURING METHOD OF SOLID-STATE ELECTRONIC DEVICE 有权电介质层的电介质层和制造方法及固体电子器件的制造方法及固体电子器件的制造方法公开(公告)号：US20160284790A1
公开(公告)日：2016-09-29
申请号：US14778578
申请日：2014-03-12
Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
Inventor： Tatsuya SHIMODA , Eisuke TOKUMITSU , Masatoshi ONOUE , Takaaki MIYASAKO
CPC classification number: H01L28/40 , H01L21/02194 , H01L21/022 , H01L21/02205 , H01L21/02269 , H01L28/56 , H01L28/60 , H01L28/87 , H01L28/91 , H01L29/513
Abstract: The invention provides a dielectric layer having high relative permittivity with low leakage current and excellent flatness. A dielectric layer 30a according to the invention is made of multilayer oxide including a first oxide layer 31 made of oxide consisting of bismuth (Bi) and niobium (Nb) or oxide consisting of bismuth (Bi), zinc (Zn), and niobium (Nb) (possibly including inevitable impurities) and a second oxide layer 32 made of oxide of one type (possibly including inevitable impurities) selected from the group of oxide consisting of lanthanum (La) and tantalum (Ta), oxide consisting of lanthanum (La) and zirconium (Zr), and oxide consisting of strontium (Sr) and tantalum (Ta).
Abstract translation: 本发明提供一种具有高相对介电常数，低漏电流和优良平面度的电介质层。 根据本发明的电介质层30a由多层氧化物制成，包括由铋（Bi）和铌（Nb）组成的氧化物或由铋（Bi），锌（Zn）和铌（Bi）组成的氧化物制成的第一氧化物层31 Nb）（可能包括不可避免的杂质）和由选自由镧（La）和钽（Ta）组成的氧化物组中的一种类型（可能包括不可避免的杂质）的氧化物制成的第二氧化物层32，由镧（La） ）和锆（Zr），以及由锶（Sr）和钽（Ta）组成的氧化物。
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