公开(公告)号：US20200382048A1

公开(公告)日：2020-12-03

申请号：US16998182

申请日：2020-08-20

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Susumu NODA ,  Tatsuya SHIBAHARA ,  Menaka DE ZOYSA ,  Takashi ASANO ,  Keisuke KITANO ,  Katsuyoshi SUZUKI ,  Takuya INOUE ,  Kenji ISHIZAKI

IPC: H02S10/30 ,  G02B1/00 ,  H01L31/055 ,  H01L31/054

Abstract: The present invention provides a thermal radiation light source that allows a wider range of material choices than those of conventional techniques, so that light having a desired peak wavelength can easily be obtained. A thermal radiation light source 10 includes a thermo-optical converter made of an optical structure in which a refractive index distribution is formed in a member 11 made of an intrinsic semiconductor so as to resonate with light of a shorter wavelength than a wavelength corresponding to a bandgap of the intrinsic semiconductor. When heat is externally supplied to the thermo-optical converter, light having a spectrum in a band of shorter wavelengths than a cutoff wavelength is produced by interband absorption in the intrinsic semiconductor, and light of a resonant wavelength λr in the wavelength band, the light causing resonance in the optical structure, is selectively intensified and emitted as thermal radiation light. In the present invention, an intrinsic semiconductor that provides a wide range of material choices is used, so that a thermal radiation light source that produces narrow-band light having a desired peak wavelength can easily be obtained.

公开(公告)号：US20170077675A1

公开(公告)日：2017-03-16

申请号：US15120254

申请日：2015-02-24

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Susumu NODA ,  Takuya INOUE ,  Takashi ASANO ,  Menaka DE ZOYSA

IPC: H01S5/10 ,  H01S5/024 ,  H01S5/02 ,  H01S5/34 ,  H01S5/042

CPC classification number: H01S5/18319 ,  H01S5/0014 ,  H01S5/0207 ,  H01S5/02453 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0428 ,  H01S5/105 ,  H01S5/18316 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3402 ,  H01S5/3419 ,  H01S2302/02

Abstract: A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.

Abstract translation: 与光电转换元件类似的能够以高响应速度切换光的强度的热发射源。 热发射源包括：二维光子晶体，其包括其中由n型半导体制成的n层，具有量子阱结构的量子阱结构层和由p-型半导体制成的p层的板， 类型半导体沿厚度方向以上述顺序堆叠，其折射率与n层，p层和量子阱结构层的折射率不同的改性折射率区域（空气孔）循环地布置在 以便与量子阱结构层中的量子阱中的子带之间的跃变能相对应的特定波长的光谐振; 以及p型电极和n型电极，用于向所述板施加在所述p层侧为负的电压，并且在所述n层的一侧为正。

公开(公告)号：US20160049897A1

公开(公告)日：2016-02-18

申请号：US14773663

申请日：2014-02-28

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Susumu NODA ,  Tatsuya SHIBAHARA ,  Menaka DE ZOYSA ,  Takashi ASANO ,  Keisuke KITANO ,  Katsuyoshi SUZUKI ,  Takuya INOUE ,  Kenji ISHIZAKI

IPC: H02S10/30 ,  H01L31/054

CPC classification number: H02S10/30 ,  G02B1/005 ,  H01K1/04 ,  H01L31/054 ,  H01L31/055 ,  Y02E10/52

Abstract: A thermal emission source that allows a wider range of material choices than those of conventional techniques, so that light having a desired peak wavelength can easily be obtained. A thermal emission source includes a thermo-optical converter composed of an optical structure in which a refractive index distribution is formed in a member made of an intrinsic semiconductor so as to resonate with light of a shorter wavelength than a wavelength corresponding to a bandgap of the intrinsic semiconductor. When heat is externally supplied to the thermo-optical converter, light having a spectrum in a band of shorter wavelengths than a cutoff wavelength is produced by interband absorption in the intrinsic semiconductor, and light of a resonant wavelength λr in the wavelength band, the light causing resonance in the optical structure, is selectively intensified and emitted as thermal emission.

Abstract translation: 与常规技术相比，允许更宽范围的材料选择的热发射源，使得可以容易地获得具有所需峰值波长的光。 热发射源包括由光学结构构成的热光转换器，其中在由本征半导体制成的构件中形成折射率分布，以便与比波长相对应的波长短的波长的波长共振 本征半导体。 当外部向热转换器提供热量时，通过本征半导体中的带间吸收和波长带中的共振波长λr的光产生具有比截止波长短的波段的光谱的光，光 导致光学结构中的共振，被选择性地增强并作为热发射发射。