公开(公告)号：JP2004012554A

公开(公告)日：2004-01-15

申请号：JP2002162218

申请日：2002-06-03

Applicant: JSR CORP ,  IBM

Inventor： ISHII HIROYUKI ,  NISHIMURA ISAO ,  NAKAMURA ATSUSHI ,  BRUNSVOLD WILLIAM R ,  WENJII LEE ,  VARANASI PUSHKARA RAO

IPC: G03F7/004 ,  C08F220/10 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition excellent in various properties including transparency to a radiation, sensitivity, resolution, dry etching resistance and pattern shape, and useful as a chemically amplified resist. SOLUTION: The radiation-sensitive resin composition comprises (A) an alkali-insoluble or slightly alkali-soluble resin which contains an acid dissociation group and becomes alkali-soluble when the acid dissociation group dissociates and (B) a radiation-sensitive acid generator typified by triphenylsulfonium bis(nonafluoro-n-butanesulfonyl)imidate, 1-(4-n-butoxynaphthalen-1-yl)tetrahydrothiophenium bis(nonafluoro-n-butanesulfonyl)imidate or 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophenium tris(nonafluoro-n-butanesulfonyl)methanide. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2005222059A

公开(公告)日：2005-08-18

申请号：JP2005028828

申请日：2005-02-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： WENJII LEE ,  VARANASI PUSHKARA R ,  HAMAD ALYSSANDREA H

IPC: G03F7/004 ,  G03C1/76 ,  G03F7/033 ,  G03F7/038 ,  H01L21/027

CPC classification number: G03F7/0382 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/115

Abstract: PROBLEM TO BE SOLVED: To provide a negative photoresist, an exposed photoresist of which is free of swelling and/or micro-bridging when dissolved in a developer solution, in order to avoid limit of spatial resolution in photolithography use.
SOLUTION: A negative photoresist composition is provided which includes: a radiation sensitive acid generator; an additive; and a resist polymer derived from at least a first monomer including a hydroxyl group. The first monomer may be acidic or approximately pH neutral. The resist polymer may be further derived from a second monomer having an aqueous base soluble moiety. The additive has a moiety typified by an N-alkoxymethyl group and may include one or more alicyclic structures. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a non-crosslinking reaction product that is insoluble in an aqueous alkaline developer solution.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供负光致抗蚀剂，当曝光的光致抗蚀剂溶解在显影剂溶液中时，其曝光的光致抗蚀剂不溶胀和/或微桥接，以避免光刻用途中的空间分辨率的限制。 解决方案：提供负性光致抗蚀剂组合物，其包括：辐射敏感酸产生剂; 添加剂 以及衍生自至少包含羟基的第一单体的抗蚀剂聚合物。 第一单体可以是酸性的或大致pH中性的。 抗蚀剂聚合物可以进一步衍生自具有碱性水溶性部分的第二单体。 添加剂具有以N-烷氧基甲基为代表的部分，并且可以包括一种或多种脂环族结构。 酸产生器适于在暴露于辐射时产生酸。 抗蚀剂聚合物适于在酸存在下与添加剂发生化学反应以产生不溶于碱性显影剂水溶液的非交联反应产物。 版权所有（C）2005，JPO＆NCIPI