公开(公告)号：US20110230023A1

公开(公告)日：2011-09-22

申请号：US13151922

申请日：2011-06-02

Applicant: Jai-Hoon SIM

Inventor： Jai-Hoon SIM

IPC: H01L21/8242

CPC classification number: H01L28/87 ,  H01L27/1085

Abstract: A dynamic random access memory (DRAM) cell and the method of manufacturing the same are provided. The DRAM cell includes a cell transistor and a cell capacitor. The cell capacitor includes a first, second and third dielectric layer, and a first, second and third capacitor electrode. The first dielectric layer is located on a first capacitor electrode. The second capacitor electrode is located on top of the first dielectric layer. The second dielectric layer is located on the second capacitor electrode. The third capacitor electrode is located on the second dielectric layer and is electrically connected with the drain. The third dielectric layer is located between the third capacitor electrode and the gate for isolating the gate from the third capacitor electrode.

Abstract translation: 提供了动态随机存取存储器（DRAM）单元及其制造方法。 DRAM单元包括单元晶体管和单元电容器。 电池电容器包括第一，第二和第三电介质层，以及第一，第二和第三电容器电极。 第一电介质层位于第一电容器电极上。 第二电容器电极位于第一电介质层的顶部。 第二电介质层位于第二电容器电极上。 第三电容器电极位于第二电介质层上并与漏极电连接。 第三电介质层位于第三电容器电极和栅极之间，用于将栅极与第三电容器电极隔离。