公开(公告)号：US11659735B2

公开(公告)日：2023-05-23

申请号：US17191734

申请日：2021-03-04

Applicant: Japan Display Inc.

Inventor： Takeshi Sakai

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  G09G3/32 ,  H01L27/12 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L27/3262 ,  G09G3/32 ,  G09G2310/0267 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/42384 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78651 ,  H01L2029/42388

Abstract: The semiconductor device includes a first gate electrode, a first gate insulating film, a semiconductor film, a first electrode, a second electrode, a second gate insulating film, and a second gate electrode. The first gate insulating film is located over the first gate electrode. The semiconductor film is located over the first gate insulating film and overlaps with the first gate electrode. The first electrode and the second electrode are each located over and in contact with the semiconductor film. The second gate insulating film is located over the first electrode and the second electrode. The second gate electrode is located over the second gate insulating film and overlaps with the second electrode and the first gate electrode. The first electrode is completely exposed from the second gate electrode.

公开(公告)号：US11575048B2

公开(公告)日：2023-02-07

申请号：US17655099

申请日：2022-03-16

Applicant: Japan Display Inc.

Inventor： Takeshi Sakai

IPC: H01L29/786 ,  H01L29/40 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32 ,  H01L27/12

Abstract: A display device including a plurality of thin film transistors. One of the plurality of thin film transistors includes a gate electrode, a semiconductor layer having a region overlapping the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, a source electrode and a drain electrode in contact with a surface of the semiconductor layer opposite to the side of the gate insulating layer, and a first shield electrode arranged in a region where the source electrode and the gate electrode overlap, and a second shield electrode arranged in a region where the drain electrode and the gate electrode overlap. The first shield electrode and the second shield electrode are arranged between the gate electrode and the semiconductor layer, and are insulated from the gate electrode, the semiconductor layer, the source electrode, and the drain electrode.

公开(公告)号：US10108056B2

公开(公告)日：2018-10-23

申请号：US15651220

申请日：2017-07-17

Applicant: Japan Display Inc.

Inventor： Hidetatsu Nakamura ,  Osamu Itou ,  Takeshi Sakai

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1362

Abstract: A pixel electrode is configured of one comb tooth portion and a contact portion whose width is widened from the end portion of the comb tooth portion in a first direction that is the extending direction of a scanning line. The width of the contact portion is not expanded in a direction opposite to the first direction, and the production of a domain is prevented. A picture signal line is bent in the direction in which the width of the contact portion of the pixel electrode is widened, so that the comb tooth portion of the pixel electrode can be disposed in the center between the picture signal lines, and the width of the contact portion can be formed in a sufficient width in the direction in which the picture signal line is bent. Thus, the contact margin of the pixel electrode can be provided.

公开(公告)号：US12298640B2

公开(公告)日：2025-05-13

申请号：US18594462

申请日：2024-03-04

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku ,  Takeshi Sakai ,  Tatsuya Toda

IPC: G02F1/1368 ,  H10K59/124 ,  H10K71/00 ,  H10K59/12

Abstract: A display device comprising a transistor and a display element over the transistor, wherein the transistor includes a gate electrode on an insulating surface, a gate insulating layer on the gate electrode, and source/drain electrodes on the oxide semiconductor layer and the gate insulating layer, each including a first conductive layer containing nitrogen and a second conductive layer on the first conductive layer, and an insulating layer contains oxygen on the oxide semiconductor layer and the source/drain electrodes.

公开(公告)号：US12176438B2

公开(公告)日：2024-12-24

申请号：US17549882

申请日：2021-12-14

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Kentaro Miura ,  Toshinari Sasaki ,  Takeshi Sakai ,  Akihiro Hanada ,  Masashi Tsubuku

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/786

Abstract: According to one embodiment, a semiconductor device includes an oxide semiconductor. The oxide semiconductor includes a first edge portion and a second edge portion intersecting a gate electrode, a first area overlapping the gate electrode, a second area along the first edge portion, a third area along the second edge portion, a fourth area the first edge portion, a fifth area along the second edge portion, a sixth area surrounded by the first area, the second area and the third area, and a seventh area surrounded by the first area, the fourth area and the fifth area. The first area, the second area and the third area, the fourth area and the fifth area have a higher resistivity than those of the sixth area and the seventh area.

公开(公告)号：US11710746B2

公开(公告)日：2023-07-25

申请号：US17191725

申请日：2021-03-04

Applicant: Japan Display Inc.

Inventor： Takeshi Sakai

IPC: H01L27/12 ,  G02F1/1362

CPC classification number: H01L27/1237 ,  G02F1/136277

Abstract: The semiconductor device comprises a gate electrode, a first gate insulating film overlapping a part of the side surface and the upper surface of the gate electrode, a second gate insulating film overlapping the upper surface of the gate electrode, a semiconductor film provided on the upper surface of the second gate insulating film and overlapping the gate electrode and a first terminal and a second terminal overlapping the upper surface of the semiconductor film. In a plan view, a first region is a region where the semiconductor film overlaps the upper surface of the first gate insulating film and the second gate insulating film between the first terminal and the second terminal, and a third region is a region that overlaps both a part of the upper surface of the gate electrode and the second gate insulating film and does not overlap the first gate insulating film.

公开(公告)号：US20160041439A1

公开(公告)日：2016-02-11

申请号：US14815779

申请日：2015-07-31

Applicant: Japan Display Inc.

Inventor： Takeshi Sakai ,  Toshimasa Ishigaki ,  Satoru Kawasaki

IPC: G02F1/1343 ,  G02F1/1339 ,  G02F1/1368 ,  G02F1/1333

CPC classification number: G02F1/134363 ,  G02F1/133512 ,  G02F1/133707 ,  G02F1/13394 ,  G02F2001/13685 ,  G02F2201/123

Abstract: In an IPS mode liquid crystal display device, an interlayer insulating film is formed on a common electrode formed in a planar shape, and a pixel electrode is formed on the interlayer insulating film. The distance between the TFT substrate and the counter substrate is determined by a columnar spacer. The pixel electrode includes one comb-shaped electrode and a contact part. The tip of the comb-shaped electrode overlaps the columnar spacer as seen in a plan view. The columnar spacer is present in the area in which an electric field that allows the liquid crystal molecules to rotate backward occurs when a voltage is applied to the pixel electrode, so that the reverse rotation of the liquid crystal molecules does not occur, and it is possible to prevent the domain from occurring.

Abstract translation: 在IPS模式液晶显示装置中，在形成为平面状的公共电极上形成层间绝缘膜，在层间绝缘膜上形成像素电极。 TFT基板和对置基板之间的距离由柱状间隔物决定。 像素电极包括一个梳状电极和接触部分。 如俯视图所示，梳状电极的尖端与柱状间隔物重叠。 当对像素电极施加电压时，柱状间隔物存在于允许液晶分子向后旋转的电场的区域，从而不会发生液晶分子的反向旋转，并且是 可能防止域发生。

公开(公告)号：US20180308987A1

公开(公告)日：2018-10-25

申请号：US15937331

申请日：2018-03-27

Applicant: Japan Display Inc.

Inventor： Takeshi Sakai ,  Yuichiro Hanyu ,  Masahiro Watabe

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/428 ,  H01L21/383 ,  H01L21/385

CPC classification number: H01L29/78696 ,  G02F1/134363 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L21/02164 ,  H01L21/383 ,  H01L21/385 ,  H01L21/428 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/7869

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

公开(公告)号：US09740062B2

公开(公告)日：2017-08-22

申请号：US14723577

申请日：2015-05-28

Applicant: Japan Display Inc.

Inventor： Hidetatsu Nakamura ,  Osamu Itou ,  Takeshi Sakai

IPC: G02F1/1343 ,  G02F1/1362

CPC classification number: G02F1/134363 ,  G02F1/136286 ,  G02F2001/134372

Abstract: A pixel electrode is configured of one comb tooth portion and a contact portion whose width is widened from the end portion of the comb tooth portion in a first direction that is the extending direction of a scanning line. The width of the contact portion is not expanded in a direction opposite to the first direction, and the production of a domain is prevented. A picture signal line is bent in the direction in which the width of the contact portion of the pixel electrode is widened, so that the comb tooth portion of the pixel electrode can be disposed in the center between the picture signal lines, and the width of the contact portion can be formed in a sufficient width in the direction in which the picture signal line is bent. Thus, the contact margin of the pixel electrode can be provided.

公开(公告)号：US09703152B2

公开(公告)日：2017-07-11

申请号：US14458314

申请日：2014-08-13

Applicant: Japan Display Inc.

Inventor： Takeshi Sakai ,  Toshimasa Ishigaki ,  Yasushi Tomioka

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1362

CPC classification number: G02F1/134363 ,  G02F1/133345 ,  G02F1/136227 ,  G02F2001/134372

Abstract: In an IPS mode liquid crystal display device, a counter electrode is formed flat on a first insulating film. A second insulating film is formed in the peripheral portion of the counter electrode. A third insulating film is formed so as to cover the counter electrode and the second insulating film. A pixel electrode is formed on the third insulating film. The second and third insulating films are present between the pixel electrode and the counter electrode in the periphery of the pixel. The third insulating film is present between the pixel electrode and the counter electrode in the portion other than the peripheral portion of the pixel. An electric field between the pixel electrode and the counter electrode is smaller in the periphery of the pixel than in the vicinity of the center of the pixel, to prevent the occurrence of a domain in the periphery of the pixel.