Abstract:
PROBLEM TO BE SOLVED: To provide a positive radiation-sensitive resin composition of which a first resist pattern is insolubilized to form an insolubilized resist pattern having sufficient stability to subsequent exposure, a developer and a second positive radiation-sensitive resin composition. SOLUTION: The positive radiation-sensitive resin composition contains a resin containing 5-65 mol% of a specific repeating unit and having an acid-dissociable group, and is used in step (1) of a resist pattern forming method including the steps of: (1) forming a first resist pattern; (2) applying a resist pattern insolubilizing resin composition on the first resist pattern to convert the first resist pattern to an insolubilized resist pattern; (3) forming a second resist layer on the insolubilized resist pattern and selectively exposing it; and (4) forming a second resist pattern. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a resist pattern coating agent which can suppress top loss of a resist patten, improving LWR, and achieving insolubilization of the resist pattern to improve curing property of the resist pattern. SOLUTION: The resist pattern coating agent includes a resin having a hydroxyl group, and a solvent containing at least either of a compound represented by general formula (1): R 1 -O-R 2 or a compound represented by general formula (2): R 3 -OH. A total content ratio of the compound represented by the general formula (1) and the compound represented by the general formula (2) is 10 mass% or more in 100 mass% of the solvent. In the general formula (1), each of R 1 and R 2 is a 3C-10C alkyl group or the like which may be replaced with fluorine. In the general formula (2), R 3 is a 1C-5C alkyl group or the like which may be replaced with fluorine. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a resist pattern coating agent used in a resist pattern forming method easily and efficiently forming a fine resist pattern. SOLUTION: The resist pattern coating agent contains a resin having a hydroxyl group, a crosslinking agent, a solvent, and a nitrogen-containing compound. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a resist pattern forming method which, in double patterning, can form a second resist pattern while retaining a first resist pattern without dissolving the first resist agent in the second resist agent, and which can suppress a line width variation of the first resist pattern and is suitably adopted even for a liquid immersion exposure process. SOLUTION: The resist pattern forming method includes a step (1) of forming a first resist pattern on a substrate with a first radiation-sensitive resin composition comprising a polymer (A1) and a solvent in which the polymer (A1) is soluble, and a step (2) of forming a second resist pattern with a second radiation-sensitive resin composition comprising a polymer (A2) and an alcoholic solvent in which the polymer (A2) is soluble, wherein the polymer (A1) and the first resist pattern are insoluble in the alcoholic solvent. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, with which a finer resist pattern with a controlled line width change can be formed readily and efficiently, while reducing the occurrence of damages. SOLUTION: The method for forming a resist pattern includes a step (1) of forming an insolubilized resist pattern, by using a resin composition for insolubilizing a resist pattern, the composition containing a polymer having a repeating unit expressed by formula (1) (wherein R 1 represents a hydrogen atom, or the like, and R 2 represents a methylene group, or the like) and a solvent; a step (2) of forming a resist layer on a substrate, where the insolubilized resist pattern is formed and selectively exposing the resist layer; and a step (3) of forming a second resist pattern. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a coating agent for a resist pattern, which is excellent in performance (curing performance) of insolubilizing and curing a resist pattern, and allows an insoluble resist pattern which is sufficiently stable against a subsequent exposure process, a developing solution and a positive radiation-sensitive resin composition. SOLUTION: The coating agent for a resist pattern contains: (I) a resin having a structural unit derived from at least one monomer of hydroxyacrylanilide and hydroxymethacrylanilide; and (II) a radical generator. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, by which a finer resist pattern can be easily and efficiently formed. SOLUTION: The method for forming the resist pattern includes steps of: (1) converting a first resist pattern group including each plurality of first pattern portions and first space portions into an insoluble resist pattern group insoluble with a predetermined positive radiation-sensitive resin composition; (2) forming a resist layer on the first pattern portions and in the first space portions by using the positive radiation-sensitive resin composition and selectively exposing the formed resist layer through a mask; and (3) developing the layer to form a second pattern portion at least partially overlapping the first pattern portion while partially exposing the upper face of at least one first pattern portion, and thereby forming a second pattern group having a plurality of composite pattern portions in which the first pattern portions and the second pattern portions are combined. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a positive radiation-sensitive resin composition which easily and efficiently forms a fine resist pattern without practically generating scum between parts of an insolubilized first resist pattern. SOLUTION: The positive radiation-sensitive resin composition contains a specific photodegradable base and is used in step (3) of a resist pattern forming method including the steps of: (1) forming a first resist pattern; (2) applying a resist pattern insolubilizing resin composition on the first resist pattern to convert the first resist pattern to an insolubilized resist pattern; (3) forming a second resist layer on the insolubilized resist pattern and selectively exposing it; and (4) forming a second resist pattern. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a resist pattern-forming method which easily, efficiently forms finer resist patterns. SOLUTION: The resist pattern-forming method includes: (1) a process in which a resin composition, which makes a resist pattern insoluble, is applied to a first resist pattern, and development is carried out after baking or UV curing, and the first resist pattern is made to be an insoluble resist pattern having a plurality of first line parts and first space parts; (2) a process in which resist layers formed in the first space parts by using a positive-type radiation-sensitive resin composition are selectively subjected to exposure via a mask; and (3) a process in which development is carried out to form second line parts in the first space parts, and a second resist pattern is formed, the second resist pattern having the first line parts, the second line parts, and one or more second space parts whose widths (W 2 ) are over 0% and at most 30% of the widths (W 1 ) of the first space parts, the second space parts being formed between the first and second line parts. COPYRIGHT: (C)2010,JPO&INPIT