Abstract:
PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition capable of forming a resist pattern having a small LWR and an excellent pattern form. SOLUTION: The radiation-sensitive resin composition comprises (A) a polymer having a specific sulfonamide group on its side chain, and (B) a radiation-sensitive acid generating agent. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition nearly free from development defect and to provide a polymer used therefor.SOLUTION: The radiation sensitive resin composition contains a polymer (A)having a carbonyl group on at least one terminal of a molecular chain, having weight average molecular weight in terms of polystyrene by gel permeation chromatography of ≥11,000 and decomposed by action of an acid and increasing solubility in an alkali developer and a radiation-sensitive acid generator (B).
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition which, as a chemically amplified resist, is high in transparency to radiation and superior in resolution and is not only superior in dry-etching resistance, sensitivity, and pattern shape or the like, but also remarkably improves the yield of semiconductor elements by suppressing the occurrence of development defects during microfabrication. SOLUTION: The radiation sensitive resin composition includes a resin (A) including an acid dissociable group, a compound (B) which generates an acid by irradiation with active light or radiation, and a compound (C) which includes a cyclodextrin skeleton and a fluorine atom in a molecular structure and includes ≤6,000 average molecular weight calculated from 1 H NMR. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation:要解决的问题:提供一种辐射敏感性树脂组合物,其作为化学放大型抗蚀剂,其对辐射的透明度高,分辨率优异,并且不仅在干蚀刻电阻,灵敏度和图案形状方面优异, 而且通过抑制微细加工时的显影缺陷的发生,显着地提高了半导体元件的成品率。 解决方案:辐射敏感性树脂组合物包括包含酸解离基团的树脂(A),通过用活性光或辐射照射产生酸的化合物(B)和包含环糊精骨架的化合物(C) 和分子结构中的氟原子,并且包括从 1 H NMR计算的≤6,000的平均分子量。 版权所有(C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a photoresist composition excellent in LWR (line width roughness) performance, MEEF (mask error enhancement factor) performance and DOF (depth of focus) performance.SOLUTION: The photoresist composition comprises [A] a polymer having a structural unit (I) expressed by a formula (1) and a structural unit (II) expressed by a formula (2), and [B] an acid generator.
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition, which is free from problems of a radiation-sensitive acid generator, having a perfluoroalkyl sulfonyl structure such as PFOS (perfluoro-n-octane sulfonic acid), which has characteristics of excellent resolution performance, no vaporization of an acid generated by exposure, and an appropriately short diffusion length, and which gives a small LWR (line width roughness) as an index of fluctuation in the line width of a resist pattern, and can give a resist pattern having a small film reduction. SOLUTION: The radiation-sensitive resin composition comprises (A) a radiation-sensitive acid generator, having a partial fluoroalkyl structure and (B) a resin having a specified cyclic carbonate structure. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a photoresist composition capable of suppressing development defects while ensuring hydrophobicity during immersion exposure.SOLUTION: The photoresist composition comprises: [A] a fluorine atom-containing polymer having a structural unit (I) including a hydrophilic group; [B] a fluorine atom-containing polymer having a structural unit (II) including an alkali-dissociable group; and [C] a polymer having an acid-dissociable group. The polymer [A], the polymer [B] and the polymer [C] are polymers different from one another.
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition which improves pattern rectangularity in addition to LWR for a line-and-space pattern, as well as circularity for a contact hole pattern and circularity holding capability for a narrow pitch pattern, suitable for liquid immersion process for a line width of 45 nm or less; and a pattern formation method using the same.SOLUTION: A radiation-sensitive resin composition contains a polymer [A] having a structural unit (I) represented by the following formula (1) and an acid generating material [B] including a compound represented by the following formula (2).
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition which suppresses generation of particles in liquid even after a long-term storage, has excellent radiation sensitivity, has small temporal variation in characteristics such as a high backward contact angle in exposure, and has excellent storage stability.SOLUTION: In the radiation-sensitive resin composition which contains [A] a fluorine-containing polymer having (f) a structural unit including a base-dissociable group, the total content of metal is 30 mass ppb or less. The metal is sodium, magnesium or iron, and each of the contents of the sodium, the magnesium and the iron is 3 mass ppb or less. The base-dissociable group of the structural unit (f) preferably has a fluorine atom, and further preferably is an aromatic hydrocarbon group having the fluorine atom.
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition suppressing generation of particles in a liquid of the composition even when stored for a long period of time, and having excellent storage stability as showing little change with time in characteristics such as superior sensitivity to radiation and a high receding contact angle during exposure.SOLUTION: The radiation-sensitive resin composition contains: a fluorine-containing polymer (A) including a structural unit (f1) having a base-dissociable group; a compound (C) that generates an acid by irradiation with radiation; and a salt (D) that generates a compound having a specified pKa by irradiation with radiation.
Abstract:
PROBLEM TO BE SOLVED: To provide a photoresist composition with which a resist pattern having fewer development defects and good pattern features can be formed.SOLUTION: The photoresist composition comprises: [A] a base polymer having a structural unit (I) containing an acid dissociable group; [B] a polymer having a structural unit (II) containing a base dissociable group and having a higher percentage of fluorine atom content than that of the polymer [A]; and [C] an acid generating compound. The polymer [A] has a weight average molecular weight in terms of polystyrene of 10,000 or more and 40,000 or less. It is suitable that the base dissociable group has a fluorine atom. It is more suitable that the base dissociable group is an aromatic hydrocarbon group. The structural unit (II) is suitably represented by the formula (2).