PROTECTIVE FILM AND RECORDING MEDIUM

    公开(公告)号:JPH0991688A

    公开(公告)日:1997-04-04

    申请号:JP25302095

    申请日:1995-09-29

    Applicant: KAO CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain a protective film having good head-touching property and excellent reproducing characteristics by forming the protective film in such a manner that hardness in an upper layer film is lower than that in a middle and lower layer films. SOLUTION: This protective film has different hardness in the thickness direction in such a manner that hardness in the upper layer side is lower than hardness in the middle and lower layers. More particularly, hardness H1 of the surface, hardness H2 at 1/4 depth of the film thickness (d) from the surface, and H3 at 1/2.g depth from the surface are specified to satisfy H1

    MAGNETIC RECORDING MEDIUM
    3.
    发明专利

    公开(公告)号:JPH0973621A

    公开(公告)日:1997-03-18

    申请号:JP22561695

    申请日:1995-09-01

    Applicant: KAO CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a metallic thin film type magnetic recording medium with which equiv. reproduced output is obtainable even if this recording medium is made to travel in both forward and backward directions. SOLUTION: The magnetic metal 5 in a crucible 4 is melted and evaporated by heating with the electron beam from an electron gun 8 and a lower magnetic film 11a of columns diagonally grown to a thickness of 500 to 1500Å is formed on a base 3 in the position of a cooling can roll 1. After the lower magnetic film 11a is taken up on a taking-up side roll 2b, this roll is set on a supply side and the base is made to travel in the same direction. An upper magnetic film 11b of a thickness of 500 to 1000Å is then formed on this lower magnetic film 11a in the position of the cooling can roll 1. The magnetic films are provided with a protective film 12 of a thickness of 50 to 200Å consisting of diamond-like carbon, etc., at need. The magnetic films are specified to >=0.65 in the min. value/max. value of the coercive force obtd. at the time the impressed magnetic field angle of the magnetic field impressed in the longitudinal direction of the magnetic recording medium is varied from 0 to 180 deg..

    MAGNETIC RECORDING MEDIUM
    4.
    发明专利

    公开(公告)号:JPH0963034A

    公开(公告)日:1997-03-07

    申请号:JP21480695

    申请日:1995-08-23

    Applicant: KAO CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain a magnetic recording medium having satisfactory running performance by forming a magnetic layer on one side of a substrate and a back coating layer having a prescribed compsn. on the other side. SOLUTION: This magnetic recording medium has a substrate, a magnetic layer formed on one side of the substrate and a back coating layer formed on the other side. The back coating layer is made of βSiC. This back coating layer of β-SiC is formed by producing cubic β-SiC by sputtering using Si or SiC as a target material and Ar+C2 H2 or Ar+CH4 as a sputtering gas but a method for forming the back coating layer is not limited to the sputtering method. This magnetic recording medium ensures a satisfactory touch with a head, and even if a lubricant is diminished, satisfactory running performance can be maintained because the β-SiC layer is excellent in lubricity.

    PRODUCTION OF MAGNETIC RECORDING MEDIUM

    公开(公告)号:JPH0954948A

    公开(公告)日:1997-02-25

    申请号:JP20211395

    申请日:1995-08-08

    Applicant: KAO CORP

    Abstract: PROBLEM TO BE SOLVED: To produce a magnetic recording medium contg. a small amt. of impurities in the magnetic layer and having a relatively high percentage of effective magnetic particles. SOLUTION: When an iron-base magnetic layer is formed on a running base film 4 by ion assisted vapor deposition or other method, an attained degree of vacuum (1st degree of vacuum) is regulated to =95% partial pressure of gaseous N2 and then a magnetic layer of iron nitride is formed.

    MAGNETIC RECORDING MEDIUM
    6.
    发明专利

    公开(公告)号:JPH0954933A

    公开(公告)日:1997-02-25

    申请号:JP20415395

    申请日:1995-08-10

    Applicant: KAO CORP

    Abstract: PROBLEM TO BE SOLVED: To improve the overwriting (O.W.) characteristics by controlling the coercive force of a metallic magnetic thin film on a supporting body in such a manner that when the angle of a magnetic field applied in the longitudinal direction is changed from 0 deg. to 180 deg., the ratio of the max. coercive force to the coercive force at 0 is a specified value or smaller during the coercive force changes from the value at 0 deg. to the min. SOLUTION: A metallic magnetic thin film, a protective film and a lubricant film are successively formed on one surface of a supporting body, and a back coating film is formed on the other side to obtain a magnetic recording medium. When a magnetic field is applied along the longitudinal direction and the angle of the magnetic field applied is changed from 0 deg. to 180 deg., the coercive force of the magnetic film shows the max. B and C in 30 deg. to 60 deg. region and 80 deg.-120 deg. region, respectively, and the min. D in 50 deg. to 80 deg. region. The ratio of the max. B to the coercive force (A) at 0 deg. is controlled to >=1.3. To obtain this ratio, the magnetic film is formed to 2000Å thickness by melting and vaporizing Co and depositing on the supporting body such as PET by electron beam heating. Thereby, even when the coercive force is increased to obtain high output, low output and high C/N, overwriting characteristics (O, W) can be improved.

    THIN FILM FORMING METHOD AND DEVICE THEREFOR

    公开(公告)号:JPH0931657A

    公开(公告)日:1997-02-04

    申请号:JP18512695

    申请日:1995-07-21

    Applicant: KAO CORP

    Abstract: PROBLEM TO BE SOLVED: To securely feed a required amt. of gaseous starting material and to form a good thin film by feeding raw material in a liq. state into plasma reaction tubes arranged oppositely to a supporting body, evaporating the same under heating and plasmatizing it by microwaves. SOLUTION: On a supporting body 1 running along a cooling can roll, a thin film is formed via plasma reaction tubes 5 arranged oppositely thereto. In the above plasma CVD thin film forming method, the plasma reaction tube 5 provided with a coil 8 for ECR is fed with a prescribed amt. of raw material substance in a vessel 9 in a liq. state via a raw material feeding pipe 12 and a valve 13, where this raw material substance is heated by a heater 15 and is evaporated in the reaction tube. This gaseous starting material is irradiated with microwaves from a microwave transmitter 7 and is plasmatized. This plasma is introduced into a vacuum tank 2 to for the thin film on the supporting body 1.

    MAGNETIC RECORDING MEDIUM
    9.
    发明专利

    公开(公告)号:JPH0954938A

    公开(公告)日:1997-02-25

    申请号:JP20801995

    申请日:1995-08-15

    Applicant: KAO CORP

    Abstract: PROBLEM TO BE SOLVED: To improve the corrosion resistance of a back coating layer by incorporating Ni, Cr, Mo, Fe and W into the back coating layer. SOLUTION: Ni, Cr, Mo, Fe and Ware incorporated as essential components into a back coating layer formed on a side of a substrate opposite to the side with a magnetic layer. Vapor deposition using a crucible divided into five parts in vacuum is fit to form the back coating layer and surface properties can be controlled by introducing oxidizing gas at the time of vapor deposition. The weight ratio of Ni:Cr:Mo:Fe:W in the back coating layer is preferably 58:22:13:4:3 or 59:16:16:5:4. The deterioration of running stability due to the corrosion of the back coating layer is prevented and the occurrence of jitter and dropout can be prevented.

    PLASMA CVD DEVICE
    10.
    发明专利

    公开(公告)号:JPH0941148A

    公开(公告)日:1997-02-10

    申请号:JP19993895

    申请日:1995-08-04

    Applicant: KAO CORP

    Abstract: PROBLEM TO BE SOLVED: To solve such a problem that the dust produced in a plasma reaction chamber deposits on a film when a thin film is produced in a plasma CVD device, and to stably form a film of high quality. SOLUTION: The inner wall of a plasma reaction chamber 2 is made of a dust-trapping means. For example, when a carbon thin film is to be formed, the plasma reaction chamber 2 is made of a graphite so that the dust essentially comprising carbon chips can be firmly bonded to the inner wall of the reaction chamber.

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