公开(公告)号：JP2008294398A

公开(公告)日：2008-12-04

申请号：JP2007331136

申请日：2007-12-21

Applicant: Kao Corp ,  花王株式会社

Inventor： YONEDA YASUHIRO ,  SHIROTA MASAMI

IPC: H01L21/304 ,  B24B37/00 ,  C09K3/14

Abstract: PROBLEM TO BE SOLVED: To provide a polishing liquid composition with which a polished surface having high surface flatness can be obtained by short-time polishing, to provide a polishing method using the same, and to provide a method of manufacturing a semiconductor device. SOLUTION: Disclosed is a polishing liquid composition which includes a composite oxide particle comprising cerium and zirconium, a dispersing agent, aqueous acrylic acid based polymer, and an aqueous medium. In the powder X-ray diffraction spectra produced by irradiating the composite oxide particle with CuKα1 ray (λ=0.154050 nm), there are a first peak having a peak top lying within a range of diffraction angle 2θ (θ is a Bragg angle) of 28.61-29.67°, a second peak having a peak top lying within a range of diffraction angle 2θ of 33.14-34.53°, a third peak having a peak top lying within a range of diffraction angle 2θ of 47.57-49.63° and a fourth peak having a peak top lying within a range of diffraction angle 2θ of 56.45-58.91°, and the first peak has a half-width of 0.8° or less. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种通过短时间抛光可以获得具有高表面平坦度的抛光表面的抛光液组合物，以提供使用其的抛光方法，并提供半导体制造方法 设备。 解决方案：公开了一种抛光液体组合物，其包含包含铈和锆的复合氧化物颗粒，分散剂，丙烯酸水性聚合物和水性介质。 在通过用CuKα1射线（λ= 0.154050nm）照射复合氧化物粒子产生的粉末X射线衍射光谱中，存在峰顶位于衍射角2θ（θ为布拉格角）范围内的峰顶， 28.61-29.67°，峰顶位于衍射角2θ为33.14-34.53°的范围内的第二峰，第三峰的峰顶在衍射角2θ为47.57〜49.63°的范围内，第四峰为 其顶峰位于衍射角2θ为56.45-58.91°的范围内，第一峰的半值宽度为0.8°以下。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2003257922A

公开(公告)日：2003-09-12

申请号：JP2002059092

申请日：2002-03-05

Applicant: KAO CORP

Inventor： SHIROTA MASAMI

IPC: G02F1/13 ,  G02F1/1333 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a low temperature cleaning method of semiconductor substrate which may be used for wiring at least tungsten or a tungsten alloy and wiring electrode and aluminum or an aluminum alloy, may assure an excel lent deposition cleaning property, and provide an excellent corrosion preventing effect for metal wiring in a semiconductor element and an LCD and for various members such as metal thin film or the like, and to provide a semiconductor substrate cleaning method which can reduce installation space of a cleaning apparatus and the storing space of cleaning liquid. SOLUTION: In this semiconductor substrate cleaning method, a semiconductor substrate is provided with at least (A) wiring or an electrode of tungsten or tungsten alloy, and (B) the wiring of aluminum or an aluminum alloy under temperatures of 15 to 60°C using a composition of a cleaning agent. The cleaning agent contains (a) an acid an/or salt thereof where an acid dissociation index pKa n (25°C) of the n-th stage of the n-valent basic acid is 3 or more but 11 or less, (b) water and a (c) chelating agent with nitrogen atoms within the molecule. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2000214599A

公开(公告)日：2000-08-04

申请号：JP1467799

申请日：1999-01-22

Applicant: KAO CORP

Inventor： SHIROTA MASAMI ,  KITAZAWA KOZO ,  KASHIHARA EIJI

IPC: H01L21/027 ,  C09D9/00 ,  G03F7/42

Abstract: PROBLEM TO BE SOLVED: To provide a peeling agent composition having superior peelability even to a resist modified or hardened by high energy processing by incorporating polycarboxylic acid and/or its salt and water and controlling its pH less than a specified value. SOLUTION: This peeling agent composition contains the polycarboxylic acid and/or its salt and water and has a pH =2; and B is absent or a -O- or -CO- group or the like.

公开(公告)号：JP2000019745A

公开(公告)日：2000-01-21

申请号：JP19055698

申请日：1998-07-06

Applicant: KAO CORP

Inventor： NAGOSHI EIJI ,  KASHIHARA EIJI ,  SHIROTA MASAMI

IPC: G03F7/42 ,  H01L21/027 ,  H01L21/308

Abstract: PROBLEM TO BE SOLVED: To easily release in a short time even a resist deteriorated by high energy treatment. SOLUTION: This is a release agent composition for a resist containing (A) at least one kind of compound selected from the group of amine compounds, quaternary ammonium salts and acids, and (B) a compound expressed by a general formula (1) (in the formula, R1 represents hydrogen atom, a 1-5C alkyl group, or a 2-5C alkenyl group, AO represents ethylene oxide and/or propylene oxide, X represents a hydrogen atom, a 1-8C hydrocarbon group, or an acyl group, n represents an integer of 0-5, m represents an integer of 0-10).

公开(公告)号：JP2007318072A

公开(公告)日：2007-12-06

申请号：JP2006356518

申请日：2006-12-28

Applicant: Kao Corp ,  花王株式会社

Inventor： SHIROTA MASAMI ,  YONEDA YASUHIRO

IPC: H01L21/304 ,  B24B37/00 ,  C09K3/14

Abstract: PROBLEM TO BE SOLVED: To provide a polishing liquid composition for forming a grinding surface whose planarity is superior. SOLUTION: This polishing liquid composition contains components A consisting of one or more selected from a group, consisting of dihydroxyethylglycine, amino polycarboxylic acid, and non-metallic salt of amino polycarboxylic acid, polyoxyalkylenealkylether, ceria particles, polycarboxylic acid system high-molecular dispersant and water-based medium. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于形成平面度优异的研磨表面的抛光液组合物。 该抛光液组合物含有由选自二羟乙基甘氨酸，氨基多元羧酸和氨基多元羧酸的非金属盐，聚氧化烯烷基醚，二氧化铈颗粒，多元羧酸体系中的一种或多种组成的组分A， 分子分散剂和水性介质。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2000206709A

公开(公告)日：2000-07-28

申请号：JP20035399

申请日：1999-07-14

Applicant: KAO CORP

Inventor： SHIROTA MASAMI ,  KITAZAWA KOZO ,  KASHIHARA EIJI ,  NAGOSHI EIJI

IPC: H01L21/027 ,  C09D9/00 ,  G03F7/42

Abstract: PROBLEM TO BE SOLVED: To provide a stripping agent composition excellent in resist strippability and capable of improving the corrosion preventing effect for various members such as the metal wiring and metal thin film of a semiconductor device and an LCD by incorporating specified amts. of org. acid and/or its salt, water and org. solvent and specifying pH of the mixture. SOLUTION: This composition contains the org. acid and/or its salt of 0.01 to 90 wt.% in order to obtain excellent resist strippability, and preferably of 0.05 to 70 wt.% and more preferably of 0.1 to 50 wt.% in order to obtain excellent resist strippability and corrosion prevention for a metal material. The composition contains preferably water of 5 to 70 wt.%, more preferably of 10 to 60 wt.% and further preferably of 15 to 50 wt.%. As the org. solvent, a solvent which can be dissolved by >=0.5 wt.% in water at 25 deg.C is preferably used, and more preferably by >=4 wt.%, and further preferably by >=7 wt.%. The pH of the composition is required to be

公开(公告)号：JP2000089481A

公开(公告)日：2000-03-31

申请号：JP25569698

申请日：1998-09-09

Applicant: KAO CORP

Inventor： KITAZAWA KOZO ,  KASHIHARA EIJI ,  SHIROTA MASAMI

IPC: H01L21/027 ,  G03F7/42

Abstract: PROBLEM TO BE SOLVED: To provide a release agent compsn. for resist capable of easily releasing even a resist deformed by high energy treatment in a short time and reduced in the corrosion of a metallic member such as a wiring material. SOLUTION: This compsn. for the resist is prepared by compounding a compd. having a heterocycle and carboxyl groups or -C(O)-NH2 groups in the molecule, org. polar solvent and water. Or, the compsn. is prepared to contain a compd. having a heterocycle and carboxyl groups or -C(O)-NH2 groups in the molecule, org. polar solvent and water. In this compsn., the org. polar solvent is preferably one or more kinds selected from dimethyl formamide, N- methyl-2-pyrrolidone, dimethyl imidazolidinone, dimethyl sulfoxide and compds. expressed by the formula of R1(X)(AO)nR2. In the formula, R1 is a hydrogen atom or 1-12C hydrocarbon group, X is -O-, -COO-, -NH- or -N((AO)nH)-, m and n are 1 to 20, A is a 2-3C alkylene group, R2 is a hydrogen atom or 1-8C hydrocarbon group.

公开(公告)号：JP2000089480A

公开(公告)日：2000-03-31

申请号：JP25569598

申请日：1998-09-09

Applicant: KAO CORP

Inventor： KITAZAWA KOZO ,  KASHIHARA EIJI ,  SHIROTA MASAMI

IPC: H01L21/027 ,  G03F7/42

Abstract: PROBLEM TO BE SOLVED: To provide a release agent compsn. for resist capable of easilily releasing even a resist deformed by high energy treatment a short time and reduced in the corrosion of a metallic member such as a wiring material. SOLUTION: This compsn. for the resist is prepared by compounding a compd. having a lactone ring and hydroxy groups in the molecule, an org. polar solvent and water. Or, the compsn. is prepared to contain a compd. having a lactone ring and hydroxy groups in the molecule, an org. polar solvent and water. In this compsn., the org. polar solvent is preferably one or more kinds selected from dimethyl formamide, N-methyl-2-pyrrolidone, dimethyl imidazolidinone, dimethyl sulfoxide and compds. expressed by the formula of R1(X)(AO)nR2. In the formula, R1 is a hydrogen atom or 1-12C hydrocarbon group, X is -O-, -COO-, -NH- or -N((AO)nH)-, m and n are 1 to 20, A is a 2-3C alkylene group, R2 is hydrogen atom or 1-8C hydrocarbon group.

公开(公告)号：JP2011171689A

公开(公告)日：2011-09-01

申请号：JP2010104079

申请日：2010-04-28

Applicant: Kao Corp ,  花王株式会社

Inventor： SUZUKI MASAHIKO ,  SHIROTA MASAMI ,  OI TOSHIAKI

IPC: H01L21/304 ,  B24B37/00 ,  C09K3/14

CPC classification number: H01L21/02024 ,  B24B37/044 ,  C09G1/02

Abstract: PROBLEM TO BE SOLVED: To provide a polishing liquid composition for a silicon wafer capable of polishing a silicon wafer at high speed, and reducing the clogging of a filter, and to provide a method of manufacturing a semiconductor substrate using the same. SOLUTION: This polishing liquid composition for a silicon wafer contains: a polymer compound having a structural unit (a1) represented by -CH2-CH-OH, a structural unit (a2) represented by -CH2-CH-OCOR, and a structural unit (a3) represented by -X-, wherein the total of the structural unit (a3) is 0.001 to 1.5 mol% in the polymer compound; a polishing agent; and an aqueous medium. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：提供能够高速抛光硅晶片的硅晶片用研磨液组合物，减少过滤器的堵塞，提供使用其的半导体基板的制造方法。 该解决方案：该硅晶片用抛光液组合物含有：具有由-CH 2 -CH-OH表示的结构单元（a1）的高分子化合物，由-CH 2 -CH-OCOR表示的结构单元（a2），和 由-X-表示的结构单元（a3），其中所述结构单元（a3）的总量在所述高分子化合物中为0.001〜1.5摩尔％ 抛光剂; 和水介质。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009007543A

公开(公告)日：2009-01-15

申请号：JP2007324025

申请日：2007-12-14

Applicant: Kao Corp ,  花王株式会社

Inventor： SHIROTA MASAMI ,  YONEDA YASUHIRO

IPC: C09K3/14 ,  B24B37/00 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide: a polishing liquid composition which enables a polishing target to be polished at a higher speed; a polishing method using the same; a method for manufacturing a glass substrate; and a method for manufacturing a semiconductor device. SOLUTION: The polishing liquid composition comprises composite oxide particles comprising cerium and zirconium, a dispersing agent and an aqueous medium. In the powder X-ray diffraction spectra obtained by irradiating the composite oxide particles with CuKα1 ray (λ=0.154050 nm), there are a peak having a peak top lying within a range of diffraction angle 2θ (θ is a Bragg angle) 28.61-29.67° (the first peak), a peak having a peak top lying within a range of diffraction angle 2θ 33.14-34.53° (the second peak), a peak having a peak top lying within a range of diffraction angle 2θ 47.57-49.63° (the third peak) and a peak having a peak top lying within a range of diffraction angle 2θ 56.45-58.91° (the forth peak), and the first peak has a half-width of 0.8° or less. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供：能够以更高的速度对抛光对象物进行研磨的研磨液组合物; 使用该抛光方法的抛光方法; 玻璃基板的制造方法; 以及半导体装置的制造方法。 解决方案：抛光液组合物包含包含铈和锆的复合氧化物颗粒，分散剂和水性介质。 在通过用CuKα1射线（λ= 0.154050nm）照射复合氧化物粒子而获得的粉末X射线衍射光谱中，具有峰顶在衍射角2θ（θ为布拉格角）28.61- 29.67°（第一峰），峰顶位于衍射角2θ33.14〜34.53°（第二峰）范围内的峰，具有峰顶在衍射角2θ47.57〜49.63°的范围内的峰 （第三峰）和峰顶在衍射角2θ56.45-58.91°（第四峰）的范围内的峰，第一峰的半值宽度为0.8°以下。 版权所有（C）2009，JPO＆INPIT