公开(公告)号：JPH0669158A

公开(公告)日：1994-03-11

申请号：JP21883292

申请日：1992-08-18

Applicant: KAWASAKI STEEL CO

Inventor： KINOSHITA OSAMU

IPC: C23C16/50 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H05H3/00

Abstract: PURPOSE:To perform plasma treatment only with neutral particles accurately even for a body to be treated with a large area. CONSTITUTION:In the device with a plasma chamber 20. a charge exchange chamber 22 for neutralizing ions generated in the plasma chamber 20, and a treatment chamber 24 for treating a body S to be treated by applying the neutral particles generated in the charge exchange chamber, the charge exchange chamber 22 and the treatment chamber 24 are screened by a plurality of first to third porous plates 36-40 and a number of fine through holes extended straightly are formed on each porous plate. Then, the neutral particles generated by the charge exchange chamber 22 are guided to the treatment chamber 25 through the feed holes formed on each of the first to third porous plates and the body S to be treated is etched.

公开(公告)号：JPH07122229A

公开(公告)日：1995-05-12

申请号：JP26648393

申请日：1993-10-25

Applicant: KAWASAKI STEEL CO

Inventor： KINOSHITA OSAMU ,  KUBOTA NAOKI

IPC: H01J49/10

Abstract: PURPOSE:To accurately measure any specific one of the components which exist eventually in a plural number as the source of ions to be sensed by mass- spectrography. CONSTITUTION:A gap 38 to admit the passage of part of thermions is formed by a pair of electron beam shielding plates 34, 36, and the size of this gap is controlled to any desired value. The potential difference between a filament 32 and these shield plates 34, 36 is controlled by variable power supplies 45a, 45b. Thereby the energy and its distribution width of an electron beam to ionize a specimen gas are changed.

公开(公告)号：JPH0536496A

公开(公告)日：1993-02-12

申请号：JP20999191

申请日：1991-07-26

Applicant: KAWASAKI STEEL CO

Inventor： KUBOTA NAOKI ,  KANEKO YOSHIO ,  MURAKAWA EMI ,  KINOSHITA OSAMU

IPC: H01L21/302 ,  H01L21/3065 ,  H05H1/46

Abstract: PURPOSE:To generate highly dense plasma even if the applied electricity is small. CONSTITUTION:A semiconductor wafer W is mounted on a holder 18 in a vacuum container 10, the vacuum container 10 is evacuated by an evacuation apparatus 14 and at the same time a reactive gas is led through a gas supplying inlet 12 to make the inside of the vacuum container 10 in a prescribed decreased pressure. Then, a prescribed a.c. voltage is applied between surfacial electrodes 22A, 22B installed in the upper and lower side of a porous plate 16 which has an electron--multiplying function and in which a large number of linear through holes are formed. In the through holes of the porous plate 16, plasma can be easily generated by the electron-multiplying function. As a result, the semiconductor wafer is etched highly precisely even by application of small amount of electricity.

公开(公告)号：JPH04245429A

公开(公告)日：1992-09-02

申请号：JP985991

申请日：1991-01-30

Applicant: KAWASAKI STEEL CO

Inventor： KINOSHITA OSAMU

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768

Abstract: PURPOSE:To provide a dry etching method which opens a through hole without producing a residue on the bottom face of the through-hole opening part. CONSTITUTION:A through hole is opened in an oxide film 2 on an aluminum interconnection 1; after that, a reactive ion etching operation is performed by using a chlorine-based gas; a residue 3 which has been produced on the bottom face of said through-hole opening part is removed selectively without having a bad influence on other elements.

公开(公告)号：JPH07273090A

公开(公告)日：1995-10-20

申请号：JP6041694

申请日：1994-03-30

Applicant: KAWASAKI STEEL CO

Inventor： KUBOTA NAOKI ,  KINOSHITA OSAMU

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To facilitate a high speed and high precision surface treatment with a simple apparatus construction by a method wherein an ion beam drawn out from a plasma is converted into a neutral beam and mixed with an ion beam and applied to an object to be treated. CONSTITUTION:An ion beam which is drawn out from an ion source 1 generating a plasma by ion drawing electrodes 4a, 4b and 4c is converted into a neutral beam in a charge exchange chamber 2. The neutral beam generated in the charge exchange chamber 2 is made to enter a treatment chamber 3 for the surface treatment of an object S to be treated. For this purpose, three mesh type ion repulsive electrodes 5a, 5b and 5c are provided between the charge exchange chamber 2 and the treatment chamber 3 and proper potentials are applied to the respective electrodes 5a, 5b and 5c to convert the ion beam drawn into the charge exchange chamber 2 into the neutral beam and make the neutral beam enter the treatment chamber 3. When the neutral beam is applied to the object S to be treated, a suitable level of an ion beam is mixed.

公开(公告)号：JPH06124920A

公开(公告)日：1994-05-06

申请号：JP18174493

申请日：1993-07-23

Applicant: KAWASAKI STEEL CO

Inventor： KUBOTA NAOKI ,  KINOSHITA OSAMU ,  KANEKO YOSHIO

IPC: C23F4/02 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To enable uniform surface treatment such as highly anisotropic etching by neutral beam of low energy and high flux. CONSTITUTION:The title device is provided with a plasma chamber 10 for generating plasma P, a neutralization chamber 14 for converting ion beam led out of plasma P generated in the plasma chamber 10 by a ion leading out electrode 12 to neutral beam and a treatment chamber 16 wherein neutral beam generated in the neutralization chamber 14 is introduced and a treatment substrate S is etched by neutral beam. An electrostatic field lens which consists of two first electrodes 28 spaced apart in an inner periphery of the neutralization chamber 14 and a second electrode 30 positioned in a middle thereof are arranged there.

公开(公告)号：JPH0684835A

公开(公告)日：1994-03-25

申请号：JP23456592

申请日：1992-09-02

Applicant: KAWASAKI STEEL CO

Inventor： KUBOTA NAOKI ,  KINOSHITA OSAMU

IPC: C23F4/04 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To execute a surface treatment such as an etching treatment to an object, to be treated, by a neutral beam with high efficiency and with high accuracy without damaging the object to be treated. CONSTITUTION:An etching apparatus is provided with a plasma chamber 10 wherein a gas is discharged and a plasma P is generated, with a neutralization chamber 14 wherein an ion beam extracted by an ion extraction electrode 12 from the plasma P generated in the plasma chamber 10 is transformed into a neutral beam and with a treatment chamber 16 wherein the neutral beam generated in the neutralization chamber 14 is introduced and an object S to be treated is etched by the neutral beam. In addition, an excitation chamber 28 which generates excitation neutral particles and which is composed of a plasma chamber 10A to transform the neutral beam into an excitation state simultaneously when the ion beam is transformed into the neutral beam, of an ECR electromagnet 22A arranged at its circumference and of a mesh electrode 30 is installed additionally at the neutralization chamber 14.

公开(公告)号：JPH04369224A

公开(公告)日：1992-12-22

申请号：JP14494291

申请日：1991-06-17

Applicant: KAWASAKI STEEL CO

Inventor： ODA MUNETAKA ,  KINOSHITA OSAMU

IPC: H01L21/304 ,  H01L21/322

Abstract: PURPOSE:To remove a contaminant such as a heavy metal or the like which is contained in a silicon wafer. CONSTITUTION:A polysilicon film 12 is formed, by a thermal CVD operation or the like, on the surface where an element is formed in a silicon wafer 10. Thereby, a contaminant such as a heavy metal or the like which is contained in the silicon wafer 10 coheres at its interface. Consequently, when a region near the surface of the silicon wafer 10 is etched together with the polysilicon film 12 as shown in (D), the contaminant such as the heavy metal or the like can efficiently be removed.

公开(公告)号：JPH04364037A

公开(公告)日：1992-12-16

申请号：JP16503091

申请日：1991-06-10

Applicant: KAWASAKI STEEL CO

Inventor： KUBOTA NAOKI ,  TADA YOSHIHIDE ,  MURAKAWA EMI ,  KINOSHITA OSAMU

IPC: H01L21/302

Abstract: PURPOSE:To perform a plasma treatment such as etching to the both surfaces of a material to be treated such as a semiconductor wafer simultaneously and to the same degree. CONSTITUTION:In a vacuum container 10, the plurality of multi-holes board 12 are located in parallel with each other. Between each two boards 12, one semiconductor wafer W is placed. Reactive gas, being supplied to the vacuum container 10 through a gas supply port 18, is eliminated from the container 10 by means of a evacuation device 20 for maintaining the inside of the vacuum container 10 at the specified pressure. Meanwhile, the specified voltage is applied to surface electrodes 14A, 14B formed on both sides of each multi-holes board 12 from a power supply 16. Since each multi-holes board 12 is provided with many through holes having an electron doubling function, the plasma is easily produced in each through hole due to an electron doubling action of the through hole. Therefore, active particulates such as ions or radicals are emitted uniformly from both sides of each multi-holes board 12 and these active particulates are carried to the surface of the semiconductor wafers and thereby the both surfaces of the semiconductor wares are etched simultaneously and to the same degree.

公开(公告)号：JPH05326452A

公开(公告)日：1993-12-10

申请号：JP14185992

申请日：1992-06-03

Applicant: KAWASAKI STEEL CO

Inventor： KINOSHITA OSAMU ,  MURAKAWA EMI ,  KUBOTA NAOKI

IPC: C23F4/00 ,  G21K1/14 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H3/00

Abstract: PURPOSE:To make a very accurate plasma treatment available by partitioning an electric charge exchanging chamber for neutralizing ions and a treatment chamber with a perforated panel having a lot of microchannel holes, in an equipment which treats a body to be treated by casting hollow particle beam. CONSTITUTION:This equipment is provided with a plasma chamber 20 having a plasma generating device, an electric charge exchanging chamber 22 which neutralizes positive ions generated in the plasma chamber 20 due to electric charge exchange and then generates neutral particles, and a treatment chamber 24 which etches a body to be treated S with the generated neutral particles. Between the two chambers 20 and 22, an ion extraction electrode 25 for extracting ions from the plasma chamber 20 into the electric charge exchanging chamber 22 and a mesh acceleration electrode 26 for accelerating the positive ions into the electric charge exchanging chamber 22 and an ion elimination electrode 30 are installed. In this case, the electric charge exchanging chamber 22 and the treatment chamber 24 are partitioned by a perforated panel 34 having fine linear microchannel holes for unifying the directions of the neutral particles and then for making a very accurate etching.