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    LOW COST GRAPHENE-BASED MICRODEVICES WITH MULTI-STATE RESISTIVE VALUES
    1.
    发明申请
    LOW COST GRAPHENE-BASED MICRODEVICES WITH MULTI-STATE RESISTIVE VALUES 审中-公开

    公开(公告)号：WO2020089786A3

    公开(公告)日：2020-05-07

    申请号：PCT/IB2019/059260

    申请日：2019-10-29

    Applicant: KHALIFA UNIVERSITY OF SCIENCE AND TECHNOLOGY

    Inventor： ALAZZAM, Anas ,  ABUNAHLA, Heba ,  MOHAMMAD, Baker

    IPC: H01L45/00

    Abstract: There is provided a planar graphene oxide (GO)-based device comprising of multiple resistance state elements in response to an applied voltage and wherein the multiple resistance state elements mimic neural synapse behaviour. The device has multiple application potentials including but not limited to non-volatile electronic memory, sensors, computing for Artificial intelligence (AI) and security. Also disclosed is method of manufacturing a memristor microdevice comprising the steps of patterning metal layer and graphene oxide or reduced graphene oxide thin films on different substrates and producing reduced graphene oxide (rGO) thin film through reduction of the graphene oxide layer. Fabricating thin films of graphene oxide and reduced graphene oxide in the microdevice from an aqueous solution of graphene oxide, results in making the process simple, cost effective, and suitable for mass production of the microdevice.

    LOW COST GRAPHENE-BASED MICRODEVICES WITH MULTI-STATE RESISTIVE VALUES
    2.
    发明申请
    LOW COST GRAPHENE-BASED MICRODEVICES WITH MULTI-STATE RESISTIVE VALUES 审中-公开

    公开(公告)号：WO2020089786A2

    公开(公告)日：2020-05-07

    申请号：PCT/IB2019/059260

    申请日：2019-10-29

    Applicant: KHALIFA UNIVERSITY OF SCIENCE AND TECHNOLOGY

    Inventor： ALAZZAM, Anas ,  ABUNAHLA, Heba ,  MOHAMMAD, Baker

    IPC: H01L45/02

    Abstract: There is provided a planar graphene oxide (GO)-based device comprising of multiple resistance state elements in response to an applied voltage and wherein the multiple resistance state elements mimic neural synapse behaviour. The device has multiple application potentials including but not limited to non-volatile electronic memory, sensors, computing for Artificial intelligence (AI) and security. Also disclosed is method of manufacturing a memristor microdevice comprising the steps of patterning metal layer and graphene oxide or reduced graphene oxide thin films on different substrates and producing reduced graphene oxide (rGO) thin film through reduction of the graphene oxide layer. Fabricating thin films of graphene oxide and reduced graphene oxide in the microdevice from an aqueous solution of graphene oxide, results in making the process simple, cost effective, and suitable for mass production of the microdevice.

    GLUCOSE SENSING DEVICE
    3.
    发明申请
    GLUCOSE SENSING DEVICE 审中-公开

    公开(公告)号：WO2019234596A1

    公开(公告)日：2019-12-12

    申请号：PCT/IB2019/054594

    申请日：2019-06-03

    Applicant: KHALIFA UNIVERSITY OF SCIENCE AND TECHNOLOGY

    Inventor： ABUNAHLA, Heba ,  MOHAMMAD, Baker ,  ALAZZAM, Anas ,  JAOUDE, Maguy Abi ,  AL-QUTAYRI, Mahmoud

    IPC: G01N27/327 ,  G01N33/66 ,  A61B5/145

    Abstract: A glucose sensor includes an insulating metal oxide layer and at least one pair of metallic electrodes arranged on the insulating metal oxide layer and separated by a gap containing the metal oxide layer. In operation, a probe including a voltage supply and current sensor can provide a voltage difference across the first and second metallic electrodes while a sample is present across the gap between the electrodes. A measured current between the first and second metallic electrodes when the voltage difference is provided can be correlated to a glucose level of the sample.

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