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    METHOD OF ETCHING ASYMMETRIC WAFER, SOLAR CELL INCLUDING THE ASYMMETRICALLY ETCHED WAFER, AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    METHOD OF ETCHING ASYMMETRIC WAFER, SOLAR CELL INCLUDING THE ASYMMETRICALLY ETCHED WAFER, AND METHOD OF MANUFACTURING THE SAME 审中-公开
    蚀刻非对称波形的方法，包括非对称蚀刻波的太阳能电池及其制造方法

    公开(公告)号：WO2009104899A2

    公开(公告)日：2009-08-27

    申请号：PCT/KR2009000768

    申请日：2009-02-18

    Applicant: LG ELECTRONICS INC ,  KIM JONG-DAE ,  KIM BUM-SUNG ,  YUN JU-HWAN ,  LEE YOUNG-HYUN

    Inventor： KIM JONG-DAE ,  KIM BUM-SUNG ,  YUN JU-HWAN ,  LEE YOUNG-HYUN

    IPC: H01L21/302

    CPC classification number: H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

    Abstract: With the present invention, two wafers for a solar cell only whose light receiving surfaces are selectively etched can be simultaneously obtained by overlapping the two wafers and performing a single-sided etching or an asymmetric etching thereon. The present invention provides a method of etching a wafer comprising: performing a single-sided etching or an asymmetric etching on the wafer, wherein the performing the single-sided etching or the asymmetric etching comprises: overlapping two wafers whose one sides face each other; and etching the overlapped two wafers, and a solar cell including the etched wafers.

    Abstract translation: 通过本发明，可以通过重叠两个晶片并对其进行单面蚀刻或非对称蚀刻来同时获得仅用于其光接收表面被选择性蚀刻的太阳能电池的两个晶片。 本发明提供了一种蚀刻晶片的方法，包括：对晶片执行单面蚀刻或非对称蚀刻，其中执行单面蚀刻或非对称蚀刻包括：将两个晶片的一个面彼此重叠; 并蚀刻重叠的两个晶片，以及包括蚀刻晶片的太阳能电池。

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