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    A SEMICONDUCTOR DEVICE INCLUDING MONOLITHICALLY INTEGRATED PMOS AND NMOS TRANSISTORS
    1.
    发明申请
    A SEMICONDUCTOR DEVICE INCLUDING MONOLITHICALLY INTEGRATED PMOS AND NMOS TRANSISTORS 审中-公开
    包含单片集成PMOS和NMOS晶体管的半导体器件

    公开(公告)号：WO2018029594A1

    公开(公告)日：2018-02-15

    申请号：PCT/IB2017/054823

    申请日：2017-08-07

    Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

    Inventor： HUSSAIN, Aftab

    IPC: H01L21/822 ,  H01L21/8238 ,  H01L27/06 ,  H01L21/20

    Abstract: A method for producing a semiconductor device involves forming a first transistor having a silicon substrate and a gate, and forming a second transistor, having a germanium substrate, on top of the first transistor. The second transistor is formed by forming a first gate (414) of the second transistor on top of, and electrically coupled to, the gate (406) of the first transistor, bonding the germanium substrate to the first gate of the second transistor so that the bonding does not damage the first transistor, and forming a second gate (422) of the second transistor on the germanium substrate.

    Abstract translation: 用于制造半导体器件的方法涉及形成具有硅衬底和栅极的第一晶体管，并且在第一晶体管的顶部上形成具有锗衬底的第二晶体管。 第二晶体管通过在第一晶体管的栅极（406）之上形成第二晶体管的第一栅极（414）并且电耦合到第一晶体管的栅极（406），将锗衬底键合到第二晶体管的第一栅极，从而形成 接合不会损坏第一晶体管，并且在锗衬底上形成第二晶体管的第二栅极（422）。

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