STRAIN-INDUCED TOPOLOGICAL TRANSFORMATION OF THERMOELECTRIC RESPONSIVE THIN FILMS

    公开(公告)号:WO2018100496A1

    公开(公告)日:2018-06-07

    申请号:PCT/IB2017/057467

    申请日:2017-11-28

    Abstract: A three-dimensional structure may be obtained from a two-dimensional thin film by applying a stressor layer to the two-dimensional thin film and releasing the thin film from a support substrate. Such a three-dimensional structure may include a thermoelectric responsive material for forming a thermoelectric generator (TEG). A manufacturing process for the transformation from 2-D to 3-D may use a polymer stressor layer deposited on the thermoelectric responsive thin film. The combination thermoelectric responsive layer and stressor layer can be released from a carrier, after which the stressor layer causes the thermoelectric responsive layer to curl. The curl can cause the thermoelectric responsive layer to roll up during the release from the carrier to form a tubular structure.

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