公开(公告)号：US20030178075A1

公开(公告)日：2003-09-25

申请号：US10366087

申请日：2003-02-12

Applicant: KIONIX, INC.

Inventor： James E. Moon ,  Lincoln C. Young

IPC: F15C001/06

CPC classification number: B81C1/00071 ,  B01F5/061 ,  B01F5/0644 ,  B01F13/0059 ,  B01F2005/0621 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00828 ,  B01J2219/00831 ,  B01J2219/00864 ,  B01J2219/00934 ,  B01L3/5027 ,  B81B2201/058 ,  B81B2203/0338 ,  B81B2203/0376 ,  G01N30/6078 ,  G01N30/6095 ,  Y10T137/0402 ,  Y10T137/2224

Abstract: A method for etching an ultra-shallow channel includes using an etch process that is selective for one material to etch a different material in order to achieve a very precise channel depth in the different material. Channels as shallow as 10 nm can be fabricated in silicon with precision of 5 nm or better using the method. Stepped channels can be fabricated where each segment is a different depth, with the segments being between 10 nm and 1000 nm in depth. The method is applied to create a fluidic channel which includes a channel substrate to which is bonded a lid substrate to confine fluids to the fluidic channels so fabricated.

Abstract translation: 蚀刻超浅沟道的方法包括使用对一种材料选择性蚀刻不同材料的蚀刻工艺，以便在不同材料中实现非常精确的沟道深度。 使用该方法可以在5nm或更好的精度的硅中制造浅10nm的通道。 可以制造阶梯通道，其中每个段是不同的深度，其中该段的深度在10nm和1000nm之间。 该方法被应用于产生流体通道，该流体通道包括通道基底，将通道基底与盖基底结合，将流体限制在如此制造的流体通道上。

公开(公告)号：US20020092822A1

公开(公告)日：2002-07-18

申请号：US10003851

申请日：2001-11-02

Applicant: Kionix, Inc.

Inventor： James E. Moon ,  Timothy J. Davis ,  Gregory J. Galvin ,  Kevin A. Shaw ,  Paul C. Waldrop ,  Sharlene A. Wilson

IPC: C23F001/00

CPC classification number: B05B5/00 ,  H01J49/0018 ,  H01J49/167 ,  Y10S438/942

Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as nulllatent maskingnull, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as nullsimultaneous multi-level etching (SMILE)null, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as nulldelayed LOCOSnull, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device. The fifth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an ESI device. The sixth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an LC device. The process improvements described provide increased manufacturing yield and design latitude in comparison to previously disclosed methods of fabrication.

Abstract translation: 公开了本发明的三个基本和三个派生方面。 三个基本方面各自公开了可以整合到完整过程中的过程序列。 第一方面，被指定为“潜屏蔽”，定义了在固定材料（例如氧化硅）中的掩模，该掩模在定义之后被保持为静止，而执行中间处理操作。 然后将潜在氧化物图案用于掩模蚀刻。 指定为“同时多级蚀刻（SMILE）”的第二方面提供了一种处理顺序，其中在蚀刻到下面的材料中第一图案可相对于第二图案被赋予高级开始，使得第一图案可以是 蚀刻成更深，更浅或与第二图案相同的深度。 指定为“延迟LOCOS”的第三方面提供了在过程的一个阶段定义接触孔图案的方法，然后在稍后阶段使用限定的图案来打开接触孔。 第四方面提供了一个整合三个基本方面来制造液相色谱（LC）/电喷雾离子化（ESI）装置的方法。 第五方面提供了一种结合两个基本方面来制造ESI装置的过程序列。 第六方面提供了一种结合两个基本方面来制造LC器件的过程序列。 与先前公开的制造方法相比，所描述的工艺改进提供了增加的制造产量和设计自由度。

公开(公告)号：US20040082088A1

公开(公告)日：2004-04-29

申请号：US10692457

申请日：2003-10-23

Applicant: Kionix, Inc.

Inventor： James E. Moon ,  Timothy J. Davis ,  Gregory J. Galvin ,  Kevin A. Shaw ,  Paul C. Waldrop ,  Sharlene A. Wilson

IPC: H01L021/00 ,  H01L021/44 ,  G11B005/127

CPC classification number: B05B5/00 ,  H01J49/0018 ,  H01J49/167 ,  Y10S438/942

Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as nulllatent maskingnull, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as nullsimultaneous multi-level etching (SMILE)null, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as nulldelayed LOCOSnull, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrrospray ionization (ESI) device. The fifth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an ESI device. The sixth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an LC device. The process improvements described provide increased manufacturing yield and design latitude in comparison to previously disclosed methods of fabrication.

Abstract translation: 公开了本发明的三个基本和三个派生方面。 三个基本方面各自公开了可以整合到完整过程中的过程序列。 第一方面，被指定为“潜屏蔽”，定义了在固定材料（例如氧化硅）中的掩模，该掩模在定义之后被保持为静止，而执行中间处理操作。 然后将潜在氧化物图案用于掩模蚀刻。 指定为“同时多级蚀刻（SMILE）”的第二方面提供了一种处理顺序，其中在蚀刻到下面的材料中第一图案可相对于第二图案被赋予高级开始，使得第一图案可以是 蚀刻成更深，更浅或与第二图案相同的深度。 指定为“延迟LOCOS”的第三方面提供了在过程的一个阶段定义接触孔图案的方法，然后在稍后阶段使用限定的图案来打开接触孔。 第四方面提供了一个整合液相色谱（LC）/电喷雾离子化（ESI）装置的所有三个基本方面的过程序列。 第五方面提供了一种结合两个基本方面来制造ESI装置的过程序列。 第六方面提供了一种结合两个基本方面来制造LC器件的过程序列。 与先前公开的制造方法相比，所描述的工艺改进提供了增加的制造产量和设计自由度。

公开(公告)号：US20020084249A1

公开(公告)日：2002-07-04

申请号：US10003672

申请日：2001-11-02

Applicant: Kionix, Inc.

Inventor： James E. Moon ,  Timothy J. Davis ,  Gregory J. Galvin ,  Kevin A. Shaw ,  Paul C. Waldrop ,  Sharlene A. Wilson

IPC: B44C001/22

CPC classification number: B05B5/00 ,  H01J49/0018 ,  H01J49/167 ,  Y10S438/942

Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as nulllatent maskingnull, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as nullsimultaneous multi-level etching (SMILE)null, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as nulldelayed LOCOSnull, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device. The fifth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an ESI device. The sixth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an LC device. The process improvements described provide increased manufacturing yield and design latitude in comparison to previously disclosed methods of fabrication.

公开(公告)号：US20020113034A1

公开(公告)日：2002-08-22

申请号：US10004463

申请日：2001-11-02

Applicant: Kionix, Inc.

Inventor： James E. Moon ,  Timothy J. Davis ,  Gregory J. Galvin ,  Kevin A. Shaw ,  Paul C. Waldrop ,  Sharlene A. Wilson

IPC: C23F001/00

CPC classification number: B05B5/00 ,  H01J49/0018 ,  H01J49/167 ,  Y10S438/942

Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as nulllatent maskingnull, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as nullsimultaneous multi-level etching (SMILE)null, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as nulldelayed LOCOSnull, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device. The fifth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an ESI device. The sixth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an LC device. The process improvements described provide increased manufacturing yield and design latitude in comparison to previously disclosed methods of fabrication.

公开(公告)号：US20020084242A1

公开(公告)日：2002-07-04

申请号：US10004300

申请日：2001-11-02

Applicant: Kionix, Inc.

Inventor： James E. Moon ,  Timothy J. Davis ,  Gregory J. Galvin ,  Kevin A. Shaw ,  Paul C. Waldrop ,  Sharlene A. Wilson

IPC: C23F001/00

CPC classification number: B05B5/00 ,  H01J49/0018 ,  H01J49/167 ,  Y10S438/942

Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as nulllatent maskingnull, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as nullsimultaneous multi-level etching (SMILE)null, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as nulldelayed LOCOSnull, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device. The fifth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an ESI device. The sixth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an LC device. The process improvements described provide increased manufacturing yield and design latitude in comparison to previously disclosed methods of fabrication.

公开(公告)号：US20020079287A1

公开(公告)日：2002-06-27

申请号：US10004299

申请日：2001-11-02

Applicant: Kionix, Inc.

Inventor： James E. Moon ,  Timothy J. Davis ,  Gregory J. Galvin ,  Kevin A. Shaw ,  Paul C. Waldrop ,  Sharlene A. Wilson

IPC: C23F001/00

CPC classification number: B05B5/00 ,  H01J49/0018 ,  H01J49/167 ,  Y10S438/942

Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as nulllatent maskingnull, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as nullsimultaneous multi-level etching (SMILE)null, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as nulldelayed LOCOSnull, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device. The fifth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an ESI device. The sixth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an LC device. The process improvements described provide increased manufacturing yield and design latitude in comparison to previously disclosed methods of fabrication.

公开(公告)号：US20020063107A1

公开(公告)日：2002-05-30

申请号：US10004493

申请日：2001-11-02

Applicant: Kionix, Inc.

Inventor： James E. Moon ,  Timothy J. Davis ,  Gregory J. Galvin ,  Kevin A. Shaw ,  Paul C. Waldrop ,  Sharlene A. Wilson

IPC: C23F001/00

CPC classification number: B05B5/00 ,  H01J49/0018 ,  H01J49/167 ,  Y10S438/942

Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as nulllatent maskingnull, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as nullsimultaneous multi-level etching (SMILE)null, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as nulldelayed LOCOSnull, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device. The fifth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an ESI device. The sixth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an LC device. The process improvements described provide increased manufacturing yield and design latitude in comparison to previously disclosed methods of fabrication.

Abstract translation: 公开了本发明的三个基本和三个派生方面。 三个基本方面各自公开了可以整合到完整过程中的过程序列。 第一方面，被指定为“潜屏蔽”，定义了在固定材料（例如氧化硅）中的掩模，该掩模在定义之后被保持为静止，而执行中间处理操作。 然后将潜在氧化物图案用于掩模蚀刻。 第二个方面，指定为“ s imultaneous m ult i - l evel e tching（SMILE）“提供了一个过程序列， 可以在蚀刻到下面的材料中相对于第二图案给予高级开始，使得第一图案可以被蚀刻成与第二图案更深，更浅或相同的深度。 指定为“延迟LOCOS”的第三方面提供了在过程的一个阶段定义接触孔图案的方法，然后在稍后阶段使用限定的图案来打开接触孔。 第四方面提供了一个整合三个基本方面来制造液相色谱（LC）/电喷雾离子化（ESI）装置的方法。 第五方面提供了一种结合两个基本方面来制造ESI装置的过程序列。 第六方面提供了一种结合两个基本方面来制造LC器件的过程序列。 与先前公开的制造方法相比，所描述的工艺改进提供了增加的制造产量和设计自由度。