公开(公告)号：EP2444519A1

公开(公告)日：2012-04-25

申请号：EP09845053.9

申请日：2009-10-08

Applicant: KIST Korea Institute of Science and Technology

Inventor： Moon,Myoung-Woon ,  YI, Jin Woo ,  Lee,Kwang Ryeol ,  Kim,Hae-Ri

IPC: C23C16/27

CPC classification number: C23C16/26 ,  A61L27/303 ,  A61L31/084 ,  A61L33/025 ,  C23C16/30 ,  Y10T428/13 ,  Y10T428/24355

Abstract: A silicon-incorporated diamond-like carbon thin film, a fabrication method thereof, and its use are disclosed. The silicon-incorporated diamond-like carbon thin film comprises a chemical bond between carbon and silicon atoms present on a surface of the silicon-incorporated diamond-like carbon thin film comprising silicon incorporated within and on the surface thereof with an atom providing hydrophilicity to the surface of the thin film on the surface of the thin film.

Abstract translation: 公开了掺入硅的金刚石碳薄膜及其制造方法及其用途。 引入硅的金刚石碳薄膜包括存在于引入硅的金刚石碳薄膜的表面上的碳原子与硅原子之间的化学键，所述硅掺杂的金刚石样碳薄膜包含并入其内表面的硅，并且具有向其提供亲水性的原子 薄膜表面的薄膜表面。