公开(公告)号：WO2014039689A1

公开(公告)日：2014-03-13

申请号：PCT/US2013/058278

申请日：2013-09-05

Applicant: KLA-TENCOR CORPORATION

Inventor： AMIR, Nuriel ,  CHOI, DongSub ,  ITZKOVICH, Tal ,  KANDEL, Daniel

IPC: H01L21/027

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Aspects of the present disclosure describe a target for use in measuring a relative position between two substantially coplanar layers of a device. The target includes periodic structures in first and second layers. Differences in relative position of the first and the second layers between the first and second periodic structures and the respective device-like structure can be measured to correct the relative position of the first and the second layers between the first and second periodic structures. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract translation: 本公开的方面描述了用于测量设备的两个基本上共面的层之间的相对位置的目标。 目标包括第一层和第二层中的周期性结构。 可以测量第一和第二周期结构之间的第一和第二层的相对位置与相应的器件状结构之间的差异，以校正第一和第二周期结构之间的第一和第二层的相对位置。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

公开(公告)号：WO2013184693A1

公开(公告)日：2013-12-12

申请号：PCT/US2013/044131

申请日：2013-06-04

Applicant: KLA-TENCOR CORPORATION

Inventor： CHOI, DongSub ,  PIERSON, Bill ,  TIEN, David ,  MANKA, James ,  PARK, Dongsuk

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G06T7/0004 ,  G03F1/00 ,  G03F7/70641 ,  G06T7/0002 ,  G06T2207/30148 ,  G06T2207/30168

Abstract: A method for monitoring mask focus includes measuring profile asymmetries in a target feature including sub-resolution assist features and deriving a focus response based on a known correlation between the profile and focus of a corresponding mask. A computer system in a lithographic process may adjust mask focus based on such derived information to conform to a desired fabrication process.

Abstract translation: 用于监测掩模焦点的方法包括测量目标特征中的轮廓不对称，包括子分辨率辅助特征，并且基于对应掩模的轮廓和焦点之间的已知相关性导出聚焦响应。 光刻工艺中的计算机系统可以基于这样的导出信息来调整掩模焦点以符合所需的制造工艺。

公开(公告)号：WO2011159625A2

公开(公告)日：2011-12-22

申请号：PCT/US2011/040216

申请日：2011-06-13

Applicant: KLA-TENCOR CORPORATION ,  CHOI, DongSub ,  WIDMANN, Amir ,  KANDEL, Daniel ,  TIEN, David

Inventor： CHOI, DongSub ,  WIDMANN, Amir ,  KANDEL, Daniel ,  TIEN, David

IPC: H01L21/027

CPC classification number: G03F7/70525

Abstract: A method for automatic process control (APC) performance monitoring may include, but is not limited to: computing one or more APC performance indicators for one or more production lots of semiconductor devices; and displaying a mapping of the one or more APC performance indicators to the one or more production lots of semiconductor devices.

Abstract translation: 用于自动过程控制（APC）性能监控的方法可以包括但不限于：计算一个或多个生产批次的半导体器件的一个或多个APC性能指标; 以及显示所述一个或多个APC性能指示符到所述一个或多个半导体器件的生产批次的映射。

公开(公告)号：WO2016037003A1

公开(公告)日：2016-03-10

申请号：PCT/US2015/048426

申请日：2015-09-03

Applicant: KLA-TENCOR CORPORATION

Inventor： HOLOVINGER, Tsachy ,  YERUSHALMI, Liran ,  TIEN, David ,  CHOI, DongSub

IPC: H01L21/66

CPC classification number: G03F7/70633 ,  G03F9/7003 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and corresponding metrology modules and systems are provided, which measure metrology parameter(s) of a previous layer of a metrology target and/or an alignment mark, prior to producing a current layer of the metrology target, derive merit figure(s) from the measured metrology parameter(s) to indicate an inaccuracy, and compensate for the inaccuracy to enhance subsequent overlay measurements of the metrology target. Methods and corresponding metrology modules and systems may further use stand-alone metrology tool(s) and track-integrated metrology tool(s) at distinct measurement patterns to address separately different aspects of variation among wafers.

Abstract translation: 提供方法和相应的计量模块和系统，其在产生计量目标的当前层之前测量计量学目标的先前层的测量参数和/或对准标记，从而从 测量的测量参数以指示不精确度，并且补偿不准确度以增强度量目标的后续覆盖测量。 方法和相应的计量模块和系统可以进一步使用独立的测量工具和轨道集成测量工具以不同的测量模式分别解决不同晶片间变化的方面。

公开(公告)号：WO2014205274A1

公开(公告)日：2014-12-24

申请号：PCT/US2014/043267

申请日：2014-06-19

Applicant: KLA-TENCOR CORPORATION

Inventor： CHOI, DongSub ,  ITZKOVICH, Tal ,  TIEN, David

IPC: H01L21/66 ,  G01B11/00 ,  G01B15/00 ,  G01N21/84 ,  G01N27/00

CPC classification number: G01N21/9501 ,  G01N21/93 ,  G01N21/956 ,  G03F7/70633 ,  G03F7/70683

Abstract: Metrology targets, design files, and design and production methods thereof are provided. The metrology targets are hybrid in that they comprise at least one imaging target structure configured to be measurable by imaging and at least one scatterometry target structure configured to be measurable by scatterometry. Thus, the hybrid targets may be measured by imaging and scatterometry simultaneously or alternatingly and/or the measurement techniques may be optimized with respect to wafer regions and other spatial parameters, as well as with respect to temporal process parameters. The hybrid targets may be used to monitor process parameters, for example via comparative overlay measurements and/or high resolution measurements.

Abstract translation: 提供了计量目标，设计文件及其设计和制作方法。 度量目标是混合的，因为它们包括被配置为可通过成像测量的至少一个成像目标结构和被配置为可通过散射测量来测量的至少一个散射测量目标结构。 因此，可以通过成像和散射测量同时或交替地测量混合目标，和/或可以相对于晶片区域和其他空间参数以及关于时间过程参数优化测量技术。 混合目标可以用于监测过程参数，例如通过比较覆盖测量和/或高分辨率测量。

公开(公告)号：WO2013067064A1

公开(公告)日：2013-05-10

申请号：PCT/US2012/062877

申请日：2012-10-31

Applicant: KLA-TENCOR CORPORATION

Inventor： CHOI, DongSub ,  TIEN, David

IPC: H01L21/027 ,  G03F1/44

CPC classification number: G03F7/70683 ,  G03F7/70633

Abstract: An overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to provide metrology information pertaining to different pitches, different coverage ratios, and linearity. Pattern elements may be separated from adjacent pattern elements by non-uniform distance; pattern elements may have non-uniform width; or pattern elements may be designed to demonstrate a specific offset as compared to pattern elements in a different layer.

Abstract translation: 公开了一种用于基于成像的计量学的覆盖目标。 覆盖目标包括包括三个或更多个目标结构的多个目标结构，每个目标结构包括一组两个或多个模式元素，其中目标结构被配置为提供关于不同间距，不同覆盖率和线性的度量信息 。 图案元素可以通过不均匀的距离与相邻图案元素分离; 图案元素可能具有不均匀的宽度; 或者图案元素可被设计为与不同层中的图案元素相比显示特定的偏移。

公开(公告)号：WO2013033322A1

公开(公告)日：2013-03-07

申请号：PCT/US2012/053028

申请日：2012-08-30

Applicant: KLA-TENCOR CORPORATION ,  CHOI, DongSub ,  TIEN, David

Inventor： CHOI, DongSub ,  TIEN, David

IPC: H01L21/66

CPC classification number: G05B19/41875 ,  G05B13/04 ,  G05B2219/32018 ,  G05B2219/32191 ,  G05B2219/42001 ,  G05B2219/45031 ,  Y02P90/22

Abstract: The invention may be embodied in a system and method for monitoring and controlling feedback control in a manufacturing process, such as an integrated circuit fabrication process. The process control parameters may include translation, rotation, magnification, dose and focus applied by a photolithographic scanner or stepper operating on silicon wafers. Overlay errors are used to compute measured parameters used in the feedback control process. Statistical parameters are computed, normalized and graphed on a common set of axes for at-a-glance comparison of measured parameters and process control parameters to facilitate the detection of problematic parameters. Parameter trends and context relaxation scenarios are also compared graphically. Feedback control parameters, such as EWMA lambdas, may be determined and used as feedback parameters for refining the APC model that computes adjustments to the process control parameters based on the measured parameters.

Abstract translation: 本发明可以体现在用于在诸如集成电路制造工艺的制造过程中监视和控制反馈控制的系统和方法中。 过程控制参数可以包括通过在硅晶片上操作的光刻扫描器或步进器施加的平移，旋转，放大，剂量和聚焦。 叠加误差用于计算反馈控制过程中使用的测量参数。 对统计参数进行计算，归一化和绘制在一组共同的轴上，以便一目了然地比较测量参数和过程控制参数，以便于检测有问题的参数。 参数趋势和上下文放松场景也进行了图形比较。 可以确定反馈控制参数，例如EWMA羊皮纸，并将其用作反馈参数，以便根据测量参数来计算对过程控制参数进行调整的APC模型。

公开(公告)号：WO2011026055A3

公开(公告)日：2011-03-03

申请号：PCT/US2010/047197

申请日：2010-08-31

Applicant: KLA-TENCOR CORPORATION ,  CHOI, DongSub ,  WIDMANN, Amir ,  SAIDIN, Zain ,  LASKE, Frank ,  ROBINSON, John

Inventor： CHOI, DongSub ,  WIDMANN, Amir ,  SAIDIN, Zain ,  LASKE, Frank ,  ROBINSON, John

IPC: H01L21/027 ,  G03F1/08

Abstract: A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.

公开(公告)号：EP2751832A1

公开(公告)日：2014-07-09

申请号：EP12828638.2

申请日：2012-08-30

Applicant: Kla-Tencor Corporation

Inventor： CHOI, DongSub ,  TIEN, David

IPC: H01L21/66

CPC classification number: G05B19/41875 ,  G05B13/04 ,  G05B2219/32018 ,  G05B2219/32191 ,  G05B2219/42001 ,  G05B2219/45031 ,  Y02P90/22

Abstract: The invention may be embodied in a system and method for monitoring and controlling feedback control in a manufacturing process, such as an integrated circuit fabrication process. The process control parameters may include translation, rotation, magnification, dose and focus applied by a photolithographic scanner or stepper operating on silicon wafers. Overlay errors are used to compute measured parameters used in the feedback control process. Statistical parameters are computed, normalized and graphed on a common set of axes for at-a-glance comparison of measured parameters and process control parameters to facilitate the detection of problematic parameters. Parameter trends and context relaxation scenarios are also compared graphically. Feedback control parameters, such as EWMA lambdas, may be determined and used as feedback parameters for refining the APC model that computes adjustments to the process control parameters based on the measured parameters.

公开(公告)号：EP2474024A2

公开(公告)日：2012-07-11

申请号：EP10812730.9

申请日：2010-08-31

Applicant: KLA-Tencor Corporation

Inventor： CHOI, DongSub ,  WIDMANN, Amir ,  SAIDIN, Zain ,  LASKE, Frank ,  ROBINSON, John

IPC: H01L21/027 ,  G03F1/08

CPC classification number: G03F7/70683 ,  G03F7/70633 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.