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    DEVICE METROLOGY TARGETS AND METHODS
    2.
    发明申请
    DEVICE METROLOGY TARGETS AND METHODS 审中-公开

    公开(公告)号：US20190004438A1

    公开(公告)日：2019-01-03

    申请号：US16102424

    申请日：2018-08-13

    Applicant: KLA-Tencor Corporation

    Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

    IPC: G03F7/20 ,  H01L21/66

    Abstract: An overlay metrology system includes one or more processors coupled to an illumination source to direct illumination to a sample and a detector to capture diffracted orders of radiation from the sample. The system may generate overlay sensitivity calibration parameters based on differential measurements of a calibration target including two overlay target cells on the sample, where first-layer target elements and second-layer target elements of the overlay target cells are distributed with a common pitch along a measurement direction and are misregistered with a selected offset value in opposite directions. The system may further determine overlay measurements based on differential measurements of additional overlay target cells with two wavelengths, where first-layer target elements and second-layer target elements of the additional overlay target cells are distributed with the common pitch and are formed to overlap symmetrically. The system may further adjust the overlay measurements with the overlay sensitivity calibration parameters.

    DEVICE METROLOGY TARGETS AND METHODS
    3.
    发明申请
    DEVICE METROLOGY TARGETS AND METHODS 审中-公开
    设备计量目标和方法

    公开(公告)号：US20160266505A1

    公开(公告)日：2016-09-15

    申请号：US15159009

    申请日：2016-05-19

    Applicant: KLA-Tencor Corporation

    Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

    IPC: G03F9/00

    CPC classification number: G03F7/70633 ,  H01L22/12 ,  H01L27/0207 ,  H01L27/092

    Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Several models are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs, and the filling of the surroundings of targets and target elements with patterns which are based on device patterns improve process compatibility. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

    Abstract translation: 提供了计量方法和目标，将计量过程超越现有技术扩展到多层目标，准周期目标和设备样目标，而不必沿着设备设计的关键方向引入偏移量。 公开了用于导出诸如来自多层目标的覆盖层的度量数据的几个模型，并且提供了相应的目标配置以实现这种测量。 显示基于设备模式的准周期性目标，以改善目标和设备设计之间的相似性，并且使用基于设备模式的模式来填充目标和目标元素的环境，从而提高了流程兼容性。 偏移仅在非关键方向引入，和/或灵敏度被校准，以便与多层测量和准周期性目标测量的解决方案一起使用直接设备光学测量测量。

    Device metrology targets and methods
    7.
    发明授权
    Device metrology targets and methods 有权

    公开(公告)号：US11054752B2

    公开(公告)日：2021-07-06

    申请号：US16102424

    申请日：2018-08-13

    Applicant: KLA-Tencor Corporation

    Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

    IPC: G03F7/20 ,  H01L21/66 ,  H01L27/02 ,  H01L27/092

    Abstract: An overlay metrology system includes one or more processors coupled to an illumination source to direct illumination to a sample and a detector to capture diffracted orders of radiation from the sample. The system may generate overlay sensitivity calibration parameters based on differential measurements of a calibration target including two overlay target cells on the sample, where first-layer target elements and second-layer target elements of the overlay target cells are distributed with a common pitch along a measurement direction and are misregistered with a selected offset value in opposite directions. The system may further determine overlay measurements based on differential measurements of additional overlay target cells with two wavelengths, where first-layer target elements and second-layer target elements of the additional overlay target cells are distributed with the common pitch and are formed to overlap symmetrically. The system may further adjust the overlay measurements with the overlay sensitivity calibration parameters.

    Device metrology targets and methods
    8.
    发明授权
    Device metrology targets and methods 有权

    公开(公告)号：US10571811B2

    公开(公告)日：2020-02-25

    申请号：US15159009

    申请日：2016-05-19

    Applicant: KLA-Tencor Corporation

    Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

    IPC: G03F7/20 ,  H01L21/66 ,  H01L27/02 ,  H01L27/092

    Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Several models are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs, and the filling of the surroundings of targets and target elements with patterns which are based on device patterns improve process compatibility. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

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