公开(公告)号：JP2001319969A

公开(公告)日：2001-11-16

申请号：JP2001081064

申请日：2001-03-21

Applicant: KONINKL PHILIPS ELECTRONICS NV

Inventor： INARD ALAIN ,  ZULIAN DOMINIQUE CECILE ,  LEVY DIDIER ,  LUNENBORG MEINDERT MARTIN ,  DE COSTER WALTER JAN AUGUST ,  OBERLIN JEAN-CLAUDE

IPC: H01L21/76 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L21/8242 ,  H01L27/08 ,  H01L27/108 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an insulation region in a periphery of an active region of a semiconductor substrate. SOLUTION: In a method for forming an insulation region (14) in a periphery of an active region (12) of a semiconductor substrate (10), this method contains the step that a trench is formed in a periphery of the active region (12) in the substrate, and the trench is filled up with a first material, and the insulation region (14) projecting from the surface of the substrate in the periphery of the active region is formed as a vertical projection in its margin. In the margin of the active region, an angle of the projection of the insulation region is gotten dull. A semiconductor device is formed by use of the above method.