X-ray radiography system and the manufacture method thereof
    2.
    发明授权
    X-ray radiography system and the manufacture method thereof 有权
    X射线辐射系统及其制造方法

    公开(公告)号:KR101103790B1

    公开(公告)日:2012-01-10

    申请号:KR20100062649

    申请日:2010-06-30

    Abstract: PURPOSE: A radiography system and a manufacturing method thereof are provided to use a uniformly deposited large-area panel, thereby enabling a user to photograph a subject in a one-to-one ratio. CONSTITUTION: An optical conductor(502) comprises an upper electrode and a lower electrode. The optical conductor includes at least one element among amorphous Se, HgI2, and PbI2, and CdZnTe. A capacitor(202) stores an electrical charge flowed into the lower electrode(203). An oxide thin film transistor outputs an image signal according to the number of the electrical charges stored in the capacitor. A semiconducting channel layer of the oxide thin film transistor comprises a ZnO based oxide semiconductor.

    Abstract translation: 目的:提供一种放射摄影系统及其制造方法,以使用均匀沉积的大面积面板,从而使得用户能够以一对一的比例拍摄对象。 构成:光导体(502)包括上电极和下电极。 光导体包括非晶Se,HgI2和PbI2中的至少一种元素和CdZnTe。 电容器(202)存储流入下电极(203)的电荷。 氧化物薄膜晶体管根据存储在电容器中的电荷的数量输出图像信号。 氧化物薄膜晶体管的半导体沟道层包括ZnO基氧化物半导体。

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