公开(公告)号：JPH0269755A

公开(公告)日：1990-03-08

申请号：JP7367289

申请日：1989-03-24

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： CHIYOE SANSUU

IPC: G03F7/26 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L21/205 ,  H01L21/3105 ,  H01L21/311

Abstract: PURPOSE: To prevent the occurrence of an intermixing effect by forming a spacer, then executing formation of a fine line width by a dry process develop ment method using the spacer as mask. CONSTITUTION: An oxidized film is formed on an upper photosensitive film 104. Next, the oxidized film is flattened by a dry process etching method to form the spacers 106 and a lower photosensitive film 102 is subjected to dry process development to form negative patterns. The position patterns are formed by executing the dry process etching to the extent of the film thickness of the upper photosensitive film 104.l The spacers 106 are removed and an SOG film 107 is formed. The SOG(Spin On Glass) film 107 is etched by the dry process etching down to the lower photosensitive film 102 having no patterns. Further, a positive pattern forming stage for developing the lower photosensitive film 102 by a dry process is provided. The dry process development of the lower photosensitive film 102 is executed with the oxidized film layer as a mask. As a result, the occurrence of the intermixing effect is averted.