公开(公告)号：JP2002299636A

公开(公告)日：2002-10-11

申请号：JP2001392751

申请日：2001-12-25

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： CHO WONJU ,  LEE SEONG JAE ,  PARK KYOUNG WAN

IPC: H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To obtain a high drive current by forming a fine channel and shallow source and drain of nm order size by utilizing a heavily doped silicon layer of a source and drain junction without separate lithographic process as a diffusion source and increasing an effective width of the channel in the same area. SOLUTION: An ultrafine MOS transistor comprises an SOI substrate including a single crystal substrate 10, an oxide film 20 formed on the substrate 10 and a first single crystal silicon layer formed on the film 20, a first silicon conductive layer 31 formed by heavily doping the first single crystal silicon layer, a source junction 80, channel 41 and drain junction 90 formed on the first silicon conductive layer 31, a gate insulating film 70 formed at the first silicon conductive layer 31, the source/drain junction and channel, a second silicon conductive layer formed at the drain junction, and a gate electrode 101 formed at a sidewall of the vertical channel.